ZHCSPB6E July 2022 – April 2025 TPS1211-Q1
PRODUCTION DATA
- 1
- 1 特性
- 2 應用
- 3 說明
- 4 Device Comparison Table
- 5 Pin Configuration and Functions
- 6 Specifications
- 7 Parameter Measurement Information
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3
Feature Description
- 8.3.1 Charge Pump and Gate Driver Output (VS, PU, PD, BST, SRC)
- 8.3.2 Capacitive Load Driving
- 8.3.3 Overcurrent and Short-Circuit Protection
- 8.3.4 Analog Current Monitor Output (IMON)
- 8.3.5 Overvoltage (OV) and Undervoltage Protection (UVLO)
- 8.3.6 Remote Temperature Sensing and Protection (DIODE)
- 8.3.7 Output Reverse Polarity Protection
- 8.3.8 TPS1211x-Q1 as a Simple Gate Driver
- 8.4 Device Functional Modes
- 9 Application and Implementation
- 10Device and Documentation Support
- 11Revision History
- 12Mechanical, Packaging, and Orderable Information
8.3.3 Overcurrent and Short-Circuit Protection
TPS1211x-Q1 has two-level current protection.
- Adjustable overcurrent protection (IOC) threshold and response time (tOC),
- Adjustable short-circuit threshold (ISC) with internally fixed fast response (tSC).
Figure 8-9 Overcurrent and
Short-Circuit Protection CharacteristicsThe device senses the voltage across the external current sense resistor through CS+ and CS–. Set the overcurrent protection threshold using an external resistor RIWRN across IWRN and GND. Use Equation 6 to calculate the required RIWRN value.
Where, RSET is the resistor connected across CS+ and VS, RSNS is the current sense resistor and IOC is the overcurrent level.
For overcurrent protection feature only, connect ISCP pin to CS– pin directly and select RIWRN resistor as per Equation 6.
In case of overcurrent or short-circuit event, TPS12111-Q1 controller turns off main FET by pulling PD low but state of pre-charge FET drive (G) is not changed.