ZHCSLO9F July 2020 – July 2024 TMUX7208 , TMUX7209
PRODUCTION DATA
- 1
- 1 特性
- 2 應用
- 3 說明
- 4 Device Comparison Table
- 5 Pin Configuration and Functions
-
6 Specifications
- 6.1 Absolute Maximum Ratings
- 6.2 ESD Ratings
- 6.3 Thermal Information
- 6.4 Recommended Operating Conditions
- 6.5 Source or Drain Continuous Current
- 6.6 ±15 V Dual Supply: Electrical Characteristics?
- 6.7 ±15 V Dual Supply: Switching Characteristics?
- 6.8 ±20 V Dual Supply: Electrical Characteristics
- 6.9 ±20 V Dual Supply: Switching Characteristics
- 6.10 44 V Single Supply: Electrical Characteristics?
- 6.11 44 V Single Supply: Switching Characteristics?
- 6.12 12 V Single Supply: Electrical Characteristics?
- 6.13 12 V Single Supply: Switching Characteristics?
- 6.14 Typical Characteristics
-
7 Parameter Measurement Information
- 7.1 On-Resistance
- 7.2 Off-Leakage Current
- 7.3 On-Leakage Current
- 7.4 Transition Time
- 7.5 tON(EN) and tOFF(EN)
- 7.6 Break-Before-Make
- 7.7 tON (VDD) Time
- 7.8 Propagation Delay
- 7.9 Charge Injection
- 7.10 Off Isolation
- 7.11 Crosstalk
- 7.12 Bandwidth
- 7.13 THD + Noise
- 7.14 Power Supply Rejection Ratio (PSRR)
- 8 Detailed Description
- 9 Application and Implementation
- 10Device and Documentation Support
- 11Revision History
- 12Mechanical, Packaging, and Orderable Information
封裝選項
機械數據 (封裝 | 引腳)
散熱焊盤機械數據 (封裝 | 引腳)
- RUM|16
訂購信息
7.9 Charge Injection
The TMUX7208 has a transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QINJ. Figure 7-9 shows the setup used to measure charge injection from source (Sx) to drain (D).
The TMUX7208 and have a transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QINJ. Figure 7-9 shows the setup used to measure charge injection from source (Sx) to drain (D).
Figure 7-9 Charge-Injection Measurement Setup