ZHCSJG7D March 2019 – February 2024 TMUX1101 , TMUX1102
PRODUCTION DATA
- 1
- 1 特性
- 2 應(yīng)用
- 3 說明
- 4 Device Comparison Table
- 5 Pin Configuration and Functions
-
6 Specifications
- 6.1 Absolute Maximum Ratings
- 6.2 ESD Ratings
- 6.3 Recommended Operating Conditions
- 6.4 Thermal Information
- 6.5 Electrical Characteristics (VDD = 5V ±10 %)
- 6.6 Electrical Characteristics (VDD = 3.3V ±10 %)
- 6.7 Electrical Characteristics (VDD = 1.8V ±10 %)
- 6.8 Electrical Characteristics (VDD = 1.2V ±10 %)
- 6.9 Typical Characteristics
- 7 Parameter Measurement Information
- 8 Detailed Description
- 9 Application and Implementation
- 10Device and Documentation Support
- 11Revision History
- 12Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
請(qǐng)參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- DBV|5
- DCK|5
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
訂購(gòu)信息
7.5 Charge Injection
The TMUX110x devices have a transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QC. Figure 7-5 shows the setup used to measure charge injection from source (S) to drain (D).
Figure 7-5 Charge-Injection
Measurement Setup