ZHCSQV1C March 2020 – December 2022 TCAN1463-Q1
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| CAN Driver Characteristics | |||||||
| VO(D) | Dominant output voltage Bus biasing active |
CANH | TXD = 0 V, 50 ≤ RL ≤ 65 ?, CL = open, RCM = open See Figure 8-1 and Figure 8-4 |
2.75 | 4.5 | V | |
| CANL | 0.5 | 2.25 | V | ||||
| VO(R) | Recessive output voltage Bus biasing active |
TXD = VIO, RL = open (no load), RCM = open See Figure 8-1 and Figure 8-4 |
2 | 3 | V | ||
| VSYM | Driver symmetry Bus biasing active (VO(CANH) + VO(CANL) ) / VCC |
nSTB= VIO, RL = 60 ?, CSPLIT = 4.7 nF, CL = Open, RCM = Open, TXD = 250 kHz, 1 MHz, 2.5 MHz See Figure 8-1 and Figure 8-4 |
0.9 | 1.1 | V/V | ||
| VSYM_DC | DC Driver symmetry Bus biasing active VCC – VO(CANH) – VO(CANL) |
nSTB= VIO, RL = 60 ?, CL = open See Figure 8-1 and Figure 8-4 |
–400 | 400 | mV | ||
| VOD(DOM) | Differential output voltage Bus biasing active Dominant |
CANH - CANL | nSTB = VIO, TXD = 0 V, 50 ? ≤ RL ≤ 65 ?, CL = open See Figure 8-1 and Figure 8-4 |
1.5 | 3 | V | |
| CANH - CANL | nSTB = VIO, TXD = 0 V, 45 ? ≤ RL ≤ 70 ?, CL = open See Figure 8-1 and Figure 8-4 |
1.4 | 3.3 | V | |||
| CANH - CANL | nSTB = VIO, TXD = 0 V, RL = 2240 ?, CL = open See Figure 8-1 and Figure 8-4 |
1.5 | 5 | V | |||
| VOD(REC) | Differential output voltage Bus biasing active Recessive |
CANH - CANL | nSTB = VIO, TXD = VIO, RL = open ?, CL = open See Figure 8-1 and Figure 8-4 |
–50 | 50 | mV | |
| VOD(STB) | Differential output voltage Bus biasing inactive Recessive |
CANH | nSTB = 0 V, TXD = VIO, RL = open (no load), CL = open See Figure 8-1 and Figure 8-4 |
-0.1 | 0.1 | V | |
| CANL | nSTB = 0 V, TXD = VIO, RL = open (no load), CL = open See Figure 8-1 and Figure 8-4 |
-0.1 | 0.1 | V | |||
| CANH - CANL | nSTB = 0 V, TXD = VIO, RL = open (no load), CL = open See Figure 8-1 and Figure 8-4 |
-0.2 | 0.2 | V | |||
| IOS(DOM) | Short-circuit steady-state output current Bus biasing active Dominant |
nSTB = VIO, TXD = 0 V -15 V ≤ V(CANH) ≤ 40 V See Figure 8-1 and Figure 8-8 |
–100 | mA | |||
| nSTB = VIO, TXD = 0 V -15 V ≤ V(CANL) ≤ 40 V See Figure 8-1 and Figure 8-8 |
100 | mA | |||||
| IOS(REC) | Short-circuit steady-state output current Bus biasing active Recessive |
nSTB = VIO, VBUS = CANH = CANL -27 V ≤ VBUS ≤ 42 V See Figure 8-1 and Figure 8-8 |
–3 | 3 | mA | ||
| RID(dom) | Differential input resistance in dominant phase | See Figure 9-2 | 40 | ohm | |||
| RID(active_rec) | Differential input resistance in active recessive drive phase | See Figure 9-2 | 60 | ohm | |||
| CAN Receiver Characteristics | |||||||
| VIT(DOM) | Receiver dominant state input voltage range Bus biasing active |
nSTB = VIO, -12 V ≤ VCM ≤ 12 V See Figure 8-5 and Table 9-6 |
0.9 | 8 | V | ||
| VIT(REC) | Receiver recessive state input voltage range Bus biasing active |
-3 | 0.5 | V | |||
| VHYS | Hysteresis voltage for input threshold Bus biasing active |
nSTB = VIO See Figure 8-5 and Table 9-6 |
135 | mV | |||
| VDIFF(DOM) | Receiver dominant state input voltage range Bus biasing inactive |
nSTB = 0 V, -12 V ≤ VCM ≤ 12 V See Figure 8-5 and Table 9-6 |
1.150 | 8 | V | ||
| VDIFF(REC) | Receiver recessive state input voltage range Bus biasing inactive |
-3 | 0.4 | V | |||
| VCM | Common mode range | nSTB = VIO See Figure 8-5 and Table 9-6 |
–12 | 12 | V | ||
| IOFF(LKG) | Power-off (unpowered) bus input leakage current | VSUP = 0 V, CANH = CANL = 5 V | 2.5 | μA | |||
| CI | Input capacitance to ground (CANH or CANL) (1) | TXD = VCC = VIO | 40 | pF | |||
| CID | Differential input capacitance (1) | TXD = VCC = VIO | 20 | pF | |||
| RID | Differential input resistance | TXD = VCC = VIO = 5 V, nSTB = 5 V -12 V ≤ VCM ≤ 12 V |
30 | 100 | k? | ||
| RIN | Input resistance (CANH or CANL) | 15 | 50 | k? | |||
| RIN(M) | Input resistance matching: [1 – RIN(CANH) / RIN(CANL)] × 100% |
V(CANH) = V(CANL) = 5 V | –3 | 3 | % | ||
| RCBF | Valid differential load impedance range for bus fault circuitry | RCM = RL, CL = open | 45 | 70 | Ω | ||
| TXD Characteristics | |||||||
| VIH | High-level input voltage | 0.7 | VIO | ||||
| VIL | Low-level input voltage | 0.3 | VIO | ||||
| IIH | High-level input leakage current | TXD = VIO = 5.5 V | –2.5 | 1 | μA | ||
| IIL | Low-level input leakage current | TXD = 0 V, VIO = 5.5 V | –115 | –2.5 | μA | ||
| ILKG(OFF) | Unpowered leakage current | TXD = 5.5 V, VSUP = VIO = 0 V | –1 | 1 | μA | ||
| RPU | Pull-up resistance to VIO | 40 | 60 | 80 | k? | ||
| CI | Input Capacitance | VIN = 0.4 x sin(2 × π × 2 × 106 × t) + 2.5 V | 5 | pF | |||
| RXD Characteristics | |||||||
| VOH | High-level output voltage | IO = –2 mA See Figure 8-5 |
0.8 | VIO | |||
| VOL | Low-level output voltage | IO = 2 mA See Figure 8-5 |
0.2 | VIO | |||
| ILKG(OFF) | Unpowered leakage current | RXD = 5.5 V, VSUP = VIO = 0 V | -1 | 1 | μA | ||
| nSTB Characteristics | |||||||
| VIH | High-level input voltage | 0.7 | VIO | ||||
| VIL | Low-level input voltage | 0.3 | VIO | ||||
| IIH | High-level input leakage current | nSTB = VIO = 5.5 V | 0.5 | 115 | μA | ||
| IIL | Low-level input leakage current | nSTB = 0 V, VIO = 5.5 V | –1 | 1 | μA | ||
| ILKG(OFF) | Unpowered leakage current | nSTB = 5.5 V, VIO = 0 V | –1 | 1 | μA | ||
| RPD | Pull-down resistance to GND | 40 | 60 | 80 | k? | ||
| nFAULT Characteristics | |||||||
| VOH | High-level output voltage | IO = -2
mA |
0.8 | VIO | |||
| VOL | Low-level output voltage | IO = 2
mA |
0.2 | VIO | |||
| ILKG(OFF) | Unpowered leakage current | nFAULT = 5.5 V, VIO = 0 V | –1 | 1 | μA | ||
| INH_MASK Characteristics | |||||||
| VIH | High-level input voltage | 0.7 | VIO | ||||
| VIL | Low-level input voltage | 0.3 | VIO | ||||
| IIH | High-level input leakage current | INH_MASK = VCC = VIO = 5.5 V | 0.5 | 115 | μA | ||
| IIL | Low-level input leakage current | INH_MASK = 0 V, VCC = VIO = 5.5 V | -1 | 1 | μA | ||
| ILKG(OFF) | Unpowered leakage current | INH_MASK = 5.5 V, VCC = VIO = 0 V | -1 | 1 | μA | ||
| RPD | Pull-down resistance to GND (1) | 40 | 60 | 80 | k? | ||
| EN Characteristics | |||||||
| VIH | High-level input voltage | 0.7 | VIO | ||||
| VIL | Low-level input voltage | 0.3 | VIO | ||||
| IIH | High-level input leakage current | EN = VCC = VIO = 5.5 V | 0.5 | 115 | μA | ||
| IIL | Low-level input leakage current | EN = 0 V, VCC = VIO = 5.5 V | -1 | 1 | μA | ||
| ILKG(OFF) | Unpowered leakage current | EN = 5.5 V, VCC = VIO = 0 V | -1 | 1 | μA | ||
| RPD | Pull-down resistance to GND | 40 | 60 | 80 | k? | ||
| WAKE Characteristics | |||||||
| VIH | High-level input voltage | Sleep mode | VSUP - 2 | V | |||
| VIL | Low-level input voltage | VSUP - 3.5 | V | ||||
| IIH | High-level input leakage current | WAKE = VSUP – 1 V | -3 | μA | |||
| IIL | Low-level input leakage current | WAKE = 1 V | 3 | μA | |||
| INH Characteristics | |||||||
| ΔVH | High-level voltage drop from VSUP to INH (VSUP - VINH) | IINH = –6 mA | 0.5 | 1 | V | ||
| ILKG(INH) | Sleep mode leakage current | INH = 0 V | –0.5 | 0.5 | μA | ||
| RPD | Pull-down resistance | Sleep mode | 2.5 | 4 | 5.6 | M? | |