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ZHCSD26E August 2012 – August 2018 LMZ21701

PRODUCTION DATA.

封裝選項(xiàng)

請(qǐng)參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。

機(jī)械數(shù)據(jù) (封裝 | 引腳)

SIL|8

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購(gòu)信息

6.5 Electrical Characteristics⁽¹⁾

Limits apply over the recommended operating junction temperature (T_J) range of -40°C to +125°C, unless otherwise stated. Minimum and Maximum limits are specified through test, design or statistical correlation. Typical values represent the most likely parametric norm at T_J = 25°C, and are provided for reference purposes only. Unless otherwise stated the following conditions apply: V_IN = 12 V.

PARAMETER		TEST CONDITIONS	MIN⁽¹⁾	TYP⁽²⁾	MAX⁽¹⁾	UNIT
SYSTEM PARAMETERS
I_Q	Operating quiescent current	EN = high, I_OUT = 0 mA, T_J = -40°C to 85°C device not switching		17	25	μA
I_Q	Operating quiescent current	EN = high, I_OUT = 0 mA, T_J = -40°C to 125°C device not switching		17	28	μA
I_SD	Shutdown current	EN = low, T_J = -40°C to 85°C		1.5	4	μA
I_SD	Shutdown current	EN = low, T_J = -40°C to 125°C		1.5	5	μA
VIN_UVLO	Input under voltage lock out rising threshold		2.8	2.9	3	V
VIN_UVLO-HYS	Input under voltage lock out hysteresis		0.125	0.18	0.26	V
T_SD	Thermal shutdown	Rising Threshold		160		°C
T_SD-HYST	Thermal shutdown hysteresis			30		°C
CONTROL
V_{IH, ENABLE}	Enable logic HIGH voltage		0.9			V
V_{IL, ENABLE}	Enable logic LOW voltage				0.3	V
I_LKG	Input leakage current	EN = VIN or GND		0.01	1	μA
V_{TH_PG}	Power Good threshold voltage	Rising (% V_OUT)	92%	95%	98%
V_{TH_PG}	Power Good threshold voltage	Falling (% V_OUT)	87%	90%	93%
V_{OL_PG}	Power Good output low voltage	I_PG = -2 mA		0.07	0.3	V
I_{LKG_PG}	Power Good leakage current	V_PG= 1.8 V		1	400	nA
I_SS	Softstart Pin source current		2.5	2.84	3.2	μA
POWER STAGE
R_DS(ON)	High-Side MOSFET ON Resistance	V_IN ≥ 6 V		82		mΩ
	High-Side MOSFET ON Resistance	V_IN = 3 V		120		mΩ
	Low-Side MOSFET ON Resistance	V_IN ≥ 6 V		40		mΩ
	Low-Side MOSFET ON Resistance	V_IN = 3 V		50		mΩ
L	Integrated power inductor value			2.2		μH
DCR	Integrated power inductor DC resistance			92		mΩ
I_CL-HS	High-Side MOSFET Current Limit	T_A= 25°C	1.4	1.8	2.2	A
I_CL-LS	Low-Side MOSFET Current Limit	T_A= 25°C		1.2		A
I_CL-DC	Output (DC) current limit	V_OUT = 5 V, T_A = 85°C		1.3		A
OUTPUT
V_REF	Internal reference voltage		0.7869	0.803	0.8191	V
I_FB	Feedback pin leakage current	V_FB= 0.8 V		1	100	nA
V_OUT	Light load initial voltage accuracy	Power save mode, C_OUT = 22 µF, T_A = -40°C to 85°C, 1% FB Resistors	-2.3%		2.8%
V_OUT	Load regulation	V_OUT= 3.3 V PWM mode operation		0.05%		/ A
V_OUT	Line regulation	3 V ≤ V_IN ≤ 17 V, V_OUT= 3.3 V, I_OUT = 1000 mA PWM mode operation		0.02%		/ V
SYSTEM CHARACTERISTICS
η	Full Load Efficiency	V_OUT = 3.3 V, I_OUT = 1000 mA		93%
η	Light Load Efficiency	V_OUT = 3.3 V, I_OUT = 1 mA		72%

(1) Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlation using Statistical Quality Control (SQC) methods. Limits are used to calculate National’s Average Outgoing Quality Level (AOQL).

(2) Typical numbers are at 25°C and represent the most likely parametric norm.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購(gòu)信息

6.5 Electrical Characteristics(1)

6.5 Electrical Characteristics⁽¹⁾