ZHCSNE5D October 2020 – February 2024 LMG3522R030-Q1
PRODUCTION DATA
請參考 PDF 數據表獲取器件具體的封裝圖。
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SWITCHING TIMES | ||||||
| td(on)(Idrain) | Drain-current turn-on delay time | From VIN > VIN,IT+ to ID > 1 A, VBUS = 400 V, LHB current = 10 A, see Figure 6-1 and Figure 6-2 | 28 | 42 | ns | |
| td(on) | Turn-on delay time | From VIN > VIN,IT+ to VDS < 320 V, VBUS = 400 V, LHB current = 10 A, see Figure 6-1 and Figure 6-2 | 33 | 54 | ns | |
| tr(on) | Turn-on rise time | From VDS < 320 V to VDS < 80 V, VBUS = 400 V, LHB current = 10 A, see Figure 6-1 and Figure 6-2 | 2.8 | 4.3 | ns | |
| td(off) | Turn-off delay time | From VIN < VIN,IT– to VDS > 80 V, VBUS = 400 V, LHB current = 10 A, see Figure 6-1 and Figure 6-2 | 48 | 69 | ns | |
| tf(off) | Turn-off fall time(1) | From VDS > 80 V to VDS > 320 V, VBUS = 400 V, LHB current = 10 A, see Figure 6-1 and Figure 6-2 | 22 | ns | ||
| Minimum IN high pulse-width for FET turn-on | VIN rise/fall times < 1 ns, VDS falls to < 200 V, VBUS = 400 V, LHB current = 10 A, see Figure 6-1 | 24 | ns | |||
| STARTUP TIMES | ||||||
| t(start) | Driver start-up time | From VVDD > VVDD,T+(UVLO) to FAULT high, CLDO5V = 100 nF, CVNEG = 2.2 μF at 0-V bias linearly decreasing to 1.5 μF at 15-V bias | 310 | 470 | μs | |
| FAULT TIMES | ||||||
| toff(OC) | Overcurrent fault FET turn-off time, FET on before overcurrent | VIN = 5 V, From ID > IT(OC) to ID < 50 A, ID di/dt = 100 A/μs | 115 | 170 | ns | |
| toff(SC) | Short-circuit current fault FET turn-off time, FET on before short circuit | VIN = 5 V, From ID > IT(SC) to ID < 50 A, ID di/dt = 700 A/μs | 65 | 100 | ns | |
| Overcurrent fault FET turn-off time, FET turning on into overcurrent | From ID > IT(OC) to ID < 50 A | 200 | 250 | ns | ||
| Short-circuit fault FET turn-off time, FET turning on into short circuit | From ID > IT(SC) to ID < 50 A | 80 | 180 | ns | ||
| IN reset time to clear FAULT latch | From VIN < VIN,IT– to FAULT high | 250 | 380 | 580 | μs | |
| t(window)(OC) | Overcurrent fault to short-circuit fault window time | 50 | ns | |||
| IDEAL-DIODE MODE CONTROL TIMES | ||||||
| Ideal-diode mode FET turn-on time | VDS < VT(3rd) to FET turn-on, VDS being discharged by half-bridge configuration inductor at 5 A | 50 | 65 | ns | ||
| Ideal-diode mode FET turn-off time | ID > IT(ZC) to FET turn-off, ID di/dt = 100 A/μs created with a half-bridge configuration | 55 | 76 | ns | ||
| Overtemperature-shutdown ideal-diode mode IN falling blanking time | 150 | 230 | 360 | ns | ||