ZHCSNE5D October 2020 – February 2024 LMG3522R030-Q1
PRODUCTION DATA
- 1
- 1 特性
- 2 應用
- 3 說明
- 4 Pin Configuration and Functions
- 5 Specifications
- 6 Parameter Measurement Information
-
7 Detailed Description
- 7.1 Overview
- 7.2 Functional Block Diagram
- 7.3
Feature Description
- 7.3.1 GaN FET Operation Definitions
- 7.3.2 Direct-Drive GaN Architecture
- 7.3.3 Drain-Source Voltage Capability
- 7.3.4 Internal Buck-Boost DC-DC Converter
- 7.3.5 VDD Bias Supply
- 7.3.6 Auxiliary LDO
- 7.3.7 Fault Detection
- 7.3.8 Drive-Strength Adjustment
- 7.3.9 Temperature-Sensing Output
- 7.3.10 Ideal-Diode Mode Operation
- 7.4 Start-Up Sequence
- 7.5 Safe Operation Area (SOA)
- 7.6 Device Functional Modes
- 8 Application and Implementation
- 9 Device and Documentation Support
- 10Revision History
- 11Mechanical, Packaging, and Orderable Information
封裝選項
請參考 PDF 數據表獲取器件具體的封裝圖。
機械數據 (封裝 | 引腳)
- RQS|52
散熱焊盤機械數據 (封裝 | 引腳)
- RQS|52
訂購信息
6.1 Switching Parameters
Figure 6-1 shows the circuit used to measure most switching parameters. The top device in this circuit is used to re-circulate the inductor current and functions in third-quadrant mode only. The bottom device is the active device that turns on to increase the inductor current to the desired test current. The bottom device is then turned off and on to create switching waveforms at a specific inductor current. Both the drain current (at the source) and the drain-source voltage is measured. Figure 6-2 shows the specific timing measurement. TI recommends to use the half-bridge as a double pulse tester. Excessive third-quadrant operation can overheat the top device.
Figure 6-1 Circuit Used to Determine
Switching Parameters
Figure 6-2 Measurement to Determine
Propagation Delays and Slew Rates