The successful use of GaN devices in
general, and LMG3522R030-Q1 in particular, depends on proper use of the
device. When using the LMG3522R030-Q1, DO:
- Read and fully understand the
data sheet, including the application notes and layout recommendations.
- Use a four-layer board and place
the return power path on an inner layer to minimize power-loop inductance.
- Use small, surface-mount bypass
and bus capacitors to minimize parasitic inductance.
- Use the proper size decoupling
capacitors and locate them close to the IC as described in Layout Guidelines.
- Use a signal isolator to supply
the input signal for the low-side device. If not, ensure the signal source is
connected to the signal GND plane which is tied to the power source only
at the LMG3522R030-Q1 IC.
- Use the
FAULT pin to determine power-up state and to detect
overcurrent and overtemperature events and safely shut off the converter.
To avoid issues in your system when
using the LMG3522R030-Q1, DON'T:
- Use a single-layer or two-layer
PCB for the LMG3522R030-Q1 as the power-loop and bypass capacitor
inductances is excessive and prevent proper operation of the IC.
- Reduce the bypass capacitor
values below the recommended values.
- Allow the device to experience
drain transients above 600 V as they can damage the device.
- Allow significant third-quadrant
conduction when the device is OFF or unpowered, which can cause overheating.
Self-protection features cannot protect the device in this mode of
operation.
- Ignore the
FAULT pin output.