ZHCSIU1A September 2018 – March 2019 LMG3410R050 , LMG3411R050
ADVANCE INFORMATION for pre-production products; subject to change without notice.
In some applications such as boost converter, the low side LMG341xR050 may need to start switching at high frequency while high side LMG341xR050 is not fully biased. If low side GaN device turn-on speed is adjusted to achieve high slew rate, the high side GaN device can turn-on unintentionally as high dv/dt can charge high side GaN device drain to source capacitance. For reliable operation, the slew rate should be slowed down to 30 V/ns by changing the resistance of RDRV pin of the low side LMG341xR050 until high side LMG341xR050's bias is fully settled. This can be monitored through the FAULT output of high side LMG341xR050 as given in Figure 4.