ZHCSIU1A September 2018 – March 2019 LMG3410R050 , LMG3411R050
ADVANCE INFORMATION for pre-production products; subject to change without notice.
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| GaN POWER
TRANSISTOR |
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| RDS,ON | On-state Resistance | TJ = 25°C | 50 | mΩ | ||
| TJ = 125°C | 78 | |||||
| VSD | Third-quadrant mode source-drain voltage | IN = 0 V, ISD = 0.1 A | 4.9 | V | ||
| IN = 0 V, ISD = 10 A | 6.8 | |||||
| Idss | Drain Leakage Current | VDS =600V, TJ = 25°C | 1 | uA | ||
| VDS =600V, TJ = 125°C | 10 | |||||
| Coss | GaN output capacitance | IN = 0 V, VDS = 400 V, FSW = 250 kHz | 89 | pF | ||
| Coss,er | Effective output capacitance, energy related | IN = 0 V, VDS =0-400 V | 119 | pF | ||
| Coss,tr | Effective output capacitance, time related | ID = 5 A, IN = 0 V, VDS = 0-400 V | 181 | pF | ||
| Qrr | Reverse recovery charge | VR = 400 V, ISD = 5 A, dISD/dt = 1 A/ns | 0 | nC | ||
| DRIVER SUPPLY | ||||||
| IVDD,LPM | Quiescent current, ultra-low-power mode | VLPM = 0 V, VDD = 12 V | 80 | 95 | µA | |
| IVDD,Q | Quiescent current (average) | Transistor held off, RDRV=40 kΩ | 0.5 | mA | ||
| Transistor held on, RDRV=40 kΩ | 0.5 | |||||
| IVDD,op | Operating current | VDD = 12 V, FSW = 500 KHz, RDRV=40 kΩ, 50% duty cycle | 27 | mA | ||
| V+5V | 5V LDO output voltage | VDD = 12 V | 4.7 | 5.3 | V | |
| VNEG | Negative Supply | 30-mA load current | -13.9 | V | ||
| BUCK BOOST
CONVERTER |
||||||
| IDCDC,PK | Peak inductor current | IOUT = 20 mA, VIN = 12 V, VOUT = -14 V | 250 | 350 | mA | |
| ΔVNEG | DC-DC output ripple voltage, pk-pk | CNEG = 2.2 µF, IOUT = 20 mA | 50 | mV | ||
| DRIVER INPUT | ||||||
| VIH | Input pin, LPM pin, logic high threshold | 2.5 | V | |||
| VIL | Input pin, LPM pin, low threshold | 0.8 | V | |||
| VHYST | Input pin, LPM pin, hysteresis | 0.8 | V | |||
| RIN,L | Input pull-down resistance | 150 | kΩ | |||
| RLPM | LPM pin pull-down resistance | 150 | kΩ | |||
| UNDERVOLTAGE LOCKOUT | ||||||
| VDD,(ON) | VDD turnon threshold | Turn-on voltage | 9.1 | V | ||
| VDD,(OFF) | VDD turnoff threshold | Turn-off voltage | 8.5 | V | ||
| ΔVDD,UVLO | UVLO Hysteresis | 550 | mV | |||
| FAULT | ||||||
| Itrip | Current Fault Trip Point | 40.4 | 60.8 | 77.6 | A | |
| Ttrip | Temperature Trip Point | Trip point | 165 | °C | ||
| TtripHys | Temperature Trip Hysteresis | 20 | °C | |||