ZHCSLY9A October 2020 – December 2020 LM7310
PRODUCTION DATA
| Test Parameter | Description | MIN | TYP | MAX | UNITS |
|---|---|---|---|---|---|
| INPUT SUPPLY (IN) | |||||
| VUVP(R) | IN supply UVP rising threshold | 2.44 | 2.53 | 2.64 | V |
| VUVP(F) | IN supply UVP falling threshold | 2.35 | 2.42 | 2.55 | V |
| IQ(ON) | IN supply quiescent current, VIN = 2.7 V | 347 | 492 | μA | |
| IN supply quiescent current, VIN = 12 V | 426 | 509 | μA | ||
| IN supply quiescent current, VIN = 23 V | 459 | 612 | μA | ||
| IQ(RCB) | IN supply quiescent current during RCB, VOUT > VIN | 189.7 | 234 | μA | |
| IQ(OFF) | IN supply disabled state current (VSD(F) < VEN < VUVLO(R)) | 74.5 | 97.6 | μA | |
| ISD | IN supply shutdown current (VEN < VSD(F)) | 4.6 | 8.2 | μA | |
| IQ(OVLO) | IN supply OFF state current (OVLO condition), VOUT > VIN | 191 | μA | ||
| IINLKG(IRPP) | IN supply leakage current (VIN = –14 V, VOUT = 0 V) | -3.5 | μA | ||
| ON RESISTANCE (IN - OUT) | |||||
| RON | VIN = 12 V, IOUT = 3 A, TJ = 25 ℃ | 28.4 | mΩ | ||
| 2.7 ≤ VIN ≤ 23 V, –40 ℃ ≤ TJ ≤ 125 ℃ | 44.85 | mΩ | |||
| ENABLE/UNDERVOLTAGE LOCKOUT (EN/UVLO) | |||||
| VUVLO(R) | EN/UVLO rising threshold | 1.183 | 1.2 | 1.223 | V |
| VUVLO(F) | EN/UVLO falling threshold | 1.076 | 1.09 | 1.116 | V |
| VSD(F) | EN/UVLO falling threshold for lowest shutdown current | 0.45 | 0.74 | V | |
| IENLKG | EN/UVLO leakage current | –0.1 | 0.1 | μA | |
| OVERVOLTAGE LOCKOUT (OVLO) | |||||
| VOV(R) | OVLO rising threshold | 1.183 | 1.2 | 1.223 | V |
| VOV(F) | OVLO falling threshold | 1.076 | 1.09 | 1.116 | V |
| IOVLKG | OVLO pin leakage current, 0.5 V < VOVLO < 1.5 V | –0.1 | 0.1 | μA | |
| IOUTLKG(OVLO) | OUT leakage current (OVLO condition), VOUT > VIN | 317 | μA | ||
| FIXED FAST-TRIP (OUT) | |||||
| IFT | Fixed fast-trip current threshold | 21.9 | A | ||
| OUTPUT LOAD CURRENT MONITOR (IMON) | |||||
| GIMON | Analog load current monitor gain (IMON : IOUT), IOUT = 0.5 A to 1 A | 144 | 181 | 216 | μA/A |
| Analog load current monitor gain (IMON : IOUT), IOUT = 1 A to 5.5 A | 153 | 181 | 207 | μA/A | |
| REVERSE CURRENT BLOCKING (IN - OUT) | |||||
| VFWD | (VIN - VOUT) forward regulation voltage, IOUT = 10 mA | 4.8 | 16.4 | 28.4 | mV |
| VREVTH | (VOUT - VIN) threshold for fast BFET turn off (enter reverse current blocking) | 22.7 | 29.3 | 36.5 | mV |
| VFWDTH | (VIN - VOUT) threshold for fast BFET turn on (exit reverse current blocking) | 85.9 | 105.8 | 125 | mV |
| IREVLKG(OFF) | Reverse leakage current (unpowered condition), VOUT = 12 V, VIN = 0 V | 4.8 | μA | ||
| IREVLKG | Reverse leakage current, (VOUT - VIN) = 21.5 V | 10.10 | 15.86 | μA | |
| IOUTLKG(RCB) | OUT leakage current during RCB state while ON, (VOUT - VIN) = 1 V | 247.6 | 322 | μA | |
| POWER GOOD INDICATION (PG) | |||||
| VPGD | PG pin low voltage while de-asserted, VIN < VUVP(F), VEN < VSD, IPG = 26 μA | 0.67 | 0.9 | V | |
| PG pin low voltage while de-asserted, VIN < VUVP(F), VEN < VSD, IPG = 242 μA | 0.78 | 1 | V | ||
| PG pin low voltage while de-asserted, VIN > VUVP(R) | 0.6 | V | |||
| IPGLKG | PG pin leakage current while asserted | 0.5 | 2 | μA | |
| POWERGOOD THRESHOLD (PGTH) | |||||
| VPGTH(R) | PGTH rising threshold | 1.183 | 1.2 | 1.223 | V |
| VPGTH(F) | PGTH falling threshold | 1.076 | 1.09 | 1.116 | V |
| IPGTHLKG | PGTH leakage current | –1 | 1 | μA | |
| OVERTEMPERATURE PROTECTION (OTP) | |||||
| TSD | Thermal shutdown rising threshold, TJ↑ | 154 | °C | ||
| TSDHYS | Thermal shutdown hysteresis, TJ↓ | 10 | °C | ||
| DVDT | |||||
| IdVdt | dVdt pin charging current | 1.15 | 2.34 | 3.66 | μA |