ZHCSQD0 April 2022 LM5013-Q1
PRODUCTION DATA
- 1 特性
- 2 應(yīng)用
- 3 說明
- 4 Revision History
- 5 Pin Configuration and Functions
- 6 Specifications
-
7 Detailed Description
- 7.1 Overview
- 7.2 Functional Block Diagram
- 7.3
Feature Description
- 7.3.1 Control Architecture
- 7.3.2 Internal VCC Regulator and Bootstrap Capacitor
- 7.3.3 Regulation Comparator
- 7.3.4 Internal Soft Start
- 7.3.5 On-Time Generator
- 7.3.6 Current Limit
- 7.3.7 N-Channel Buck Switch and Driver
- 7.3.8 Schottky Diode Selection
- 7.3.9 Enable/Undervoltage Lockout (EN/UVLO)
- 7.3.10 Power Good (PGOOD)
- 7.3.11 Thermal Protection
- 7.4 Device Functional Modes
- 8 Application and Implementation
- 9 Power Supply Recommendations
- 10Layout
- 11Device and Documentation Support
- 12Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- DDA|8
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
- DDA|8
訂購信息
7.3.5 On-Time Generator
The on time of the LM5013-Q1 high-side FET is determined by the RRON resistor and is inversely proportional to the input voltage, VIN. The inverse relationship with VIN results in a nearly constant frequency as VIN is varied. Use Equation 3 to calculate the on time.
Equation 3. 
Use Equation 4 to determine the RRON resistor to set a specific switching frequency in CCM.
Equation 4. 
Select RRON for a minimum on time (at maximum VIN) greater than 50 ns for proper operation. In addition to this minimum on time, the maximum frequency for this device is limited to 1 MHz.