ZHCSIH2C May 2018 – February 2024 ESDS311 , ESDS312 , ESDS314
PRODUCTION DATA
- 1
- 1 特性
- 2 應(yīng)用
- 3 說(shuō)明
- 4 Pin Configuration and Functions
- 5 Specifications
- 6 Detailed Description
- 7 Application and Implementation
- 8 Device and Documentation Support
- 9 Revision History
- 10Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
請(qǐng)參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- DBV|5
散熱焊盤(pán)機(jī)械數(shù)據(jù) (封裝 | 引腳)
訂購(gòu)信息
5.7 Typical Characteristics
Figure 5-1 Clamping Voltage vs. Peak Pulse Current (tp= 8/20μs), Any IO Pin to GND
Figure 5-3 Surge Current, Clamping Voltage and Power Curve (tp = 8/20μs), Any IO Pin to GND
Figure 5-5 TLP I-V Curve, IO to GND, tp = 100ns
Figure 5-7 +8kV IEC 61000-4-2 Clamping Voltage Waveform
Figure 5-9 DC Leakage vs. Ambient Temperature, Bias Voltage = 3.6V
Figure 5-11 Surge Power Derating with Respect To Ambient Temperature
Figure 5-2 Clamping Voltage vs. Peak Pulse Current (tp= 8/20μs), GND to Any IO Pin
Figure 5-4 DC I-V Curve
Figure 5-6 TLP I-V Curve, IO to GND Negative, tp=100ns
Figure 5-8 -8kV IEC 61000-4-2 Clamping Voltage Waveform
Figure 5-10 Capacitance vs. Bias Voltage at 25 °C
Figure 5-12 Differential Insertion Loss