ZHCSIH2C May 2018 – February 2024 ESDS311 , ESDS312 , ESDS314
PRODUCTION DATA
請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
The I/O pins of ESDS311, ESDS312, and ESDS314 can withstand surge events (IEC 61000-4-5, 8/20μs waveform) up to 25A and 170W. These devices also provide ESD protection up to ±30kV contact and ±30kV air gap per IEC 61000-4-2 standard. The I/O pins can withstand an electrical fast transient (EFT) burst of up to 80A (IEC 61000-4-4 5/50ns waveform, 4kV with 50? impedance). The capacitance between each I/O pin to ground is 4.5pF (typical) and 5.5pF (maximum). This device supports data rates up to 1Gbps.
The reverse DC breakdown voltage of each I/O pin is a minimum of 4.5V. This ensures that sensitive equipment is protected from surges above the reverse standoff voltage of 3.6V. The I/O pins feature an ultra-low leakage current of 100nA (maximum) with a bias of 3.6V. This device features an industrial operating range of –40°C to +125°C.