ZHCSIH2C May 2018 – February 2024 ESDS311 , ESDS312 , ESDS314
PRODUCTION DATA
請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
| PARAMETER | TEST CONDITIONS | Device | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|---|
| VRWM | Reverse stand-off voltage | IIO < 500nA, across operating temperature range | 3.6 | V | |||
| ILEAKAGE | Leakage current at 3.6V | VIO = 3.6V, Any IO pin to GND | 5 | 50 | nA | ||
| VBRF | Breakdown voltage, IO to GND (1) | IIO = 1mA | 4.5 | 7.5 | V | ||
| VFWD | Forward Voltage, GND to IO | IIO = 1mA | 0.8 | V | |||
| VHOLD | Holding Voltage, IO to GND (2) | IIO = 1mA | 5 | V | |||
| VCLAMP | Surge Clamping voltage, tp = 8/20μs | IPP = 1A, Any IO pin to GND | ESDS312/314 | 5 | V | ||
| VCLAMP | IPP = 12A, Any IO pin to GND | ESDS311 | 6.3 | V | |||
| ESDS312/314 | 5.6 | ||||||
| VCLAMP | IPP = 25A, Any IO pin to GND | ESDS311 | 7.7 | V | |||
| ESDS312/314 | 6.5 | ||||||
| VCLAMP | IPP = 1A, GND to any IO pin | ESDS312/314 | 1 | V | |||
| VCLAMP | IPP = 12A, GND to any IO pin | ESDS311 | 3 | V | |||
| ESDS312/314 | 2.1 | ||||||
| VCLAMP | IPP = 25A, GND to any IO pin | ESDS311 | 4.9 | V | |||
| ESDS312/314 | 3.6 | ||||||
| VCLAMP | TLP Clamping Voltage, tp = 100ns | IPP = 16A, Any IO pin to GND | ESDS311 | 6.5 | V | ||
| ESDS312/314 | 5.5 | ||||||
| VCLAMP | IPP = 16A, GND to any IO pin | ESDS311 | 3.4 | V | |||
| ESDS312/314 | 2.2 | ||||||
| CLINE | Line capacitance, Any IO to GND | VIO = 0V, Vp-p = 30mV, f = 1MHz | 4.5 | 5.5 | pF | ||
| ΔCLINE | Variation of line capacitance | CLINE1 - CLINE2, VIO = 0V, Vp-p = 30mV, f = 1MHz | ESDS312/314 | 0.05 | 0.1 | pF | |
| CCROSS | Line-to-line capacitance | VIO = 0V, Vrms = 30mV, f = 1MHz | ESDS312/314 | 2.25 | 2.75 | pF | |