ZHCSGB3A June 2017 – August 2018 ESD122
PRODUCTION DATA.
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| VRWM | Reverse stand-off voltage | IIO < 10 nA | –3.6 | 3.6 | V | |
| VBRF | Breakdown voltage, any IO pin to GND(1) | IIO = 1 mA, TA = 25°C | 5 | 7.9 | V | |
| VBRR | Breakdown voltage, GND to any IO pin(1) | IIO = 1 mA, TA = 25°C | –7.9 | –5 | V | |
| VHOLD | Holding voltage(2) | IIO = 1 mA | 5.9 | V | ||
| VCLAMP | Clamping voltage | IPP = 1 A, TLP, from IO to GND, TA = 25°C | 6.4 | V | ||
| IPP = 5 A, TLP, from IO to GND, TA = 25°C | 8.4 | |||||
| IPP = 1 A, TLP, from GND to IO, TA = 25°C | 6.4 | |||||
| IPP = 5 A, TLP, from GND to IO, TA = 25°C | 8.4 | |||||
| ILEAK | Leakage current, any IO to GND | VIO = ±2.5 V | 10 | nA | ||
| RDYN | Dynamic resistance | IO to GND, Measured between TLP IPP of 10 A and 20 A, TA = 25°C | 0.5 | Ω | ||
| GND to IO, Measured between TLP IPP of 10 A and 20 A, TA = 25°C | 0.5 | |||||
| CL | Line capacitance | VIO = 0 V, f = 1 MHz, IO to GND, TA = 25°C | 0.2 | 0.27 | pF | |
| ΔCL | Variation of line capacitance | Difference between the capacitance of the two IO pins measured with respect to ground, VIO = 0 V, f = 1 MHz, TA = 25°C, GND = 0 V | 0.01 | pF | ||
| CCROSS | Channel to channel capacitance | Capacitance from one IO to another IO, VIO = 0 V, f = 1 MHz, TA = 25°C,
GND = 0 V |
0.1 | 0.14 | pF | |