SNOK014 December 2024 TPS7H6005-SEP
1.2 Device Details
Testing was performed per MIL-STD-883, Test Method 1019, with a sample size per MIL-PRF-38535, Appendix C, test condition A (high dose rate).
Table 1-1 Device and Exposure Details
| RHA TID Details: Up to 50 krad(Si) | |
|---|---|
| TI Part Number | TPS7H6005-SEP |
| Device Function | Half Bridge Gate Driver |
| Die Name | RTPS7H6005ASEP |
| Package | 56-pin HTSSOP DCA |
| Technology | LBC7 (250nm Linear BiCMOS) |
| Quantity tested | HDR :
|
| Lot Accept/Reject | Passes 50krad(Si); no observed fails |
| HDR Radiation Facility | Texas Instruments CLAB Dallas, Texas |
| Die Lot Number and Assembly Lot Number | 3280124TI1 / 4365694ML4 |
| HDR Dose Rate | 169.2 rad (Si) / s |
| HDR Radiation Source | Gammacell 220 Excel (GC-220E) Co-60 |
| Irradiation and Test Temperature | Ambient, room temperature controlled to 25°C ±6°C per MIL-STD-883 and MIL-STD-750 |
Figure 1-1 Device Used in Exposure (Front)
Figure 1-2 Device Used in Exposure (Back)