6 Summary

The purpose of this study was to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance and single-event transients (SET) performance of the THVD9491-SEP, a radiation-tolerant 1.2V to 5.5V octal bus transceivers with tri-state outputs. Heavy-ions with an LET_EFF of 47.5MeV × cm²/mg were used for the SEE characterization. The SEE results demonstrated that the THVD9491-SEP is SEL-free up to LET_EFF = 47.5MeV × cm²/ mg and across the full electrical specifications. Transients at LET_EFF = 47.5MeV × cm²/ mg on V_OUT are presented and discussed. CREME96-based worst-week event-rate calculations for LEO (ISS) and GEO orbits for the DSEE are presented for reference.