1 SN54SLC8T245-SEP Single-Event Effects (SEE)

The purpose of this study is to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) and single-event transient (SET) performance of the SN54SLC8T245-SEP, 8-bit dual-supply bus transceiver. Heavy-ions with an LET_EFF of 43 MeV-cm²/mg were used to irradiate the devices with a fluence of 1 × 10⁷ ions/cm² for SEL and 1 × 10⁶ ions/cm² for SET. The results demonstrate that the SN54SLC8T245-SEP is SEL-free up to LET_EFF = 43 MeV-cm²/mg at 125°C. SET characterization is presented and discussed for a variety of different operating conditions.