ZHCSK44G December 2009 – November 2022 UCC28C40-Q1 , UCC28C41-Q1 , UCC28C42-Q1 , UCC28C43-Q1 , UCC28C44-Q1 , UCC28C45-Q1
PRODUCTION DATA
- 1 特性
- 2 應(yīng)用
- 3 說明
- 4 Revision History
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
- 7 Specifications
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3 Feature Description
- 8.4 Device Functional Modes
-
9 Application and Implementation
- 9.1 Application Information
- 9.2
Typical Application
- 9.2.1 Design Requirements
- 9.2.2
Detailed Design Procedure
- 9.2.2.1 Custom Design With WEBENCH? Tools
- 9.2.2.2 Input Bulk Capacitor and Minimum Bulk Voltage
- 9.2.2.3 Transformer Turns Ratio and Maximum Duty CycleG
- 9.2.2.4 Transformer Inductance and Peak Currents
- 9.2.2.5 Output Capacitor
- 9.2.2.6 Current Sensing Network
- 9.2.2.7 Gate Drive Resistor
- 9.2.2.8 VREF Capacitor
- 9.2.2.9 RT/CT
- 9.2.2.10 Start-Up Circuit
- 9.2.2.11 Voltage Feedback Compensation
- 9.2.3 Application Curves
- 9.2.4 Power Supply Recommendations
- 9.2.5 Layout
- 10Device and Documentation Support
- 11Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- D|8
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
訂購信息
10.6 Electrostatic Discharge Caution
 |
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. |
| ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. |