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ZHCSBB1D July 2013 – March 2018 UCC28740

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

D|7
- MPDS347D

散熱焊盤(pán)機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購(gòu)信息

6.5 Electrical Characteristics

over operating free-air temperature range, V_VDD = 25 V, HV = open, V_FB = 0 V, V_VS = 4 V, T_A = –40°C to +125°C, T_J = T_A (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
HIGH-VOLTAGE START UP
I_HV	Start-up current out of VDD	V_HV = 100 V, V_VDD = 0 V, start state	100	250	500	µA
I_HVLKG25	Leakage current at HV	V_HV = 400 V, run state, T_J = 25°C		0.01	0.5	µA
BIAS SUPPLY INPUT
I_RUN	Supply current, run	I_DRV = 0, run state		2	2.65	mA
I_WAIT	Supply current, wait	I_DRV = 0, wait state		95	125	µA
I_START	Supply current, start	I_DRV = 0, V_VDD = 18 V, start state, I_HV = 0		18	30	µA
I_FAULT	Supply current, fault	I_DRV = 0, fault state		95	130	µA
UNDERVOLTAGE LOCKOUT
V_VDD(on)	VDD turnon threshold	V_VDD low to high	19	21	23	V
V_VDD(off)	VDD turnoff threshold	V_VDD high to low	7.35	7.75	8.15	V
VS INPUT
V_VSNC	Negative clamp level	I_VSLS = –300 µA, volts below ground	190	250	325	mV
I_VSB	Input bias current	V_VS = 4 V	–0.25	0	0.25	µA
FB INPUT
I_FBMAX	Full-range input current	f_SW = f_SW(min)	16	23	30	µA
V_FBMAX	Input voltage at full range	I_FB = 25 µA, T_J = 25°C	0.75	0.88	1	V
R_FB	FB-input resistance, linearized	ΔI_FB = 20 µA, centered at I_FB = 15 µA, T_J = 25°C	10	14	18	kΩ
CS INPUT
V_CST(max)	Maximum CS threshold voltage	I_FB = 0 µA⁽¹⁾	738	773	810	mV
V_CST(min)	Minimum CS threshold voltage	I_FB = 35 µA⁽¹⁾	170	194	215	mV
K_AM	AM-control ratio	V_CST(max) / V_CST(min)	3.6	4	4.45	V/V
V_CCR	Constant-current regulation factor		318	330	343	mV
K_LC	Line-compensation current ratio	I_VSLS = –300 µA, I_VSLS / current out of CS pin	24	25	28.6	A/A
t_CSLEB	Leading-edge blanking time	DRV output duration, V _CS = 1 V	180	230	280	ns
DRIVERS
I_DRS	DRV source current	V_DRV = 8 V, V_VDD = 9 V	20	25		mA
R_DRVLS	DRV low-side drive resistance	I_DRV = 10 mA		6	12	Ω
V_DRCL	DRV clamp voltage	V_VDD = 35 V		14	16	V
R_DRVSS	DRV pulldown in start-state		150	190	230	kΩ
PROTECTION
V_OVP	Overvoltage threshold	At VS input, T_J = 25°C⁽²⁾	4.52	4.6	4.71	V
V_OCP	Overcurrent threshold	At CS input	1.4	1.5	1.6	V
I_VSL(run)	VS line-sense run current	Current out of VS pin increasing	190	225	275	µA
I_VSL(stop)	VS line-sense stop current	Current out of VS pin decreasing	70	80	100	µA
K_VSL	VS line sense ratio	I_VSL(run) / I_VSL(stop)	2.45	2.8	3.05	A/A
T_J(stop)	Thermal-shutdown temperature	Internal junction temperature		165		°C

(1) This device automatically varies the control frequency and current sense thresholds to improve EMI performance. These threshold voltages and frequency limits represent average levels.

(2) The overvoltage threshold level at VS decreases with increasing temperature by 0.8 mV/°C. This compensation is included to reduce the power-supply output overvoltage detection variance over temperature.