SLUSFV6 June 2025 UCC27302A-Q1
PRODUCTION DATA
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The UCC27302A-Q1 is a high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configurations. The two outputs are independently controlled with two TTL-compatible input signals. The device can also work with CMOS type control signals at its inputs as long as the signals meet the turn-on and turn-off threshold specifications of the device. The floating high-side driver is capable of operating with an HB voltage up to 115V with respect to VSS. A 120V bootstrap diode is integrated in the UCC27302A-Q1 device to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and provides clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout (UVLO) is provided on both the low-side and the high-side power rails. EN pin is provided (in DRC packaged parts) to enable or disable the driver. The driver also has input interlock functionality, which shuts off both the outputs when the two inputs overlap.
In the UCC27302A-Q1 device, the high side and low side have seperate, interlocked inputs that allow maximum flexibility of input control signals in the application. The boot diode for the high-side driver bias supply is internal to the UCC27302A-Q1.The high-side driver is referenced to the switch node (HS), which is typically the source pin of the high-side MOSFET and drain pin of the low-side MOSFET. The low-side driver is referenced to VSS, which is typically ground. The UCC27302A-Q1 functions are divided into the input stages, UVLO protection, level shift, boot diode, and output driver stages.
| FEATURE | BENEFIT |
|---|---|
| 3.7A source and 4.5A sink current | High peak current ideal for driving large power MOSFETs with minimal power loss (fast-drive capability at Miller plateau) |
| Input pins (HI and LI) can directly handle –10VDC up to 20VDC | Increased robustness and ability to handle undershoot and overshoot can interface directly to gate-drive transformers without having to use rectification diodes |
| 120V internal boot diode | Provides voltage margin to meet surge requirements |
| Switch node (HS pin) able to handle –(28–VDD)V absolute maximum for 100ns | Allows the high-side channel to have extra protection from inherent negative voltages caused by parasitic inductance and stray capacitance |
| Robust ESD circuitry to handle voltage spikes | Excellent immunity to large dV/dT conditions |
| 20ns propagation delay with 7.2ns rise time and 5.5ns fall time | Best-in-class switching characteristics and extremely low-pulse transmission distortion |
| Cross-conduction protection | Interlocks inputs to prevent shoot-through |
| Enable/disable functionality | Offers additional control over the driver for different system states (such as powerup sequencing) and a low quiescent current consumption when disabled |
| 4ns (typical) delay matching between channels | Avoids transformer volt-second offset in bridge |
| TTL optimized thresholds with increased hysteresis | Complementary to analog or digital PWM controllers; increased hysteresis offers added noise immunity |