ZHCSQS5F April 2006 – January 2024 TPS5420
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY VOLTAGE (VIN PIN) | ||||||
| IQ(VIN) | VIN quiescent current | Non-switching, VSENSE = 2 V, PH pin open | 2 | 4.4 | mA | |
| ISD(VIN) | VIN shutdown supply current |
Shutdown, ENA = 0 V | 15 | 50 | μA | |
| UVLO | ||||||
| VINUVLO(R) | VIN UVLO rising threshold |
VVIN rising | 5.3 | 5.5 | V | |
| VINUVLO(H) | VIN UVLO hysteresis | 0.35 | V | |||
| VOLTAGE REFERENCE | ||||||
| VFB | FB voltage | TJ = 25°C | 1.202 | 1.221 | 1.239 | V |
| VFB | FB voltage | TJ = –40°C to 125°C | 1.196 | 1.221 | 1.245 | V |
| OSCILLATOR | ||||||
| fSW | Switching frequency | 400 | 500 | 600 | kHz | |
| tON(min) | Minimum ON pulse width | 150 | 200 | ns | ||
| DMAX | Maximum Duty Cycle | fSW = 500kHz | 85% | 89% | ||
| ENABLE (ENA PIN) | ||||||
| VEN(R) | ENA voltage rising threshold | 1.3 | V | |||
| VEN(F) | ENA voltage falling threshold | 0.5 | V | |||
| VEN(H) | ENA voltage hysteresis | 325 | mV | |||
| tSS | Internal slow-start time (0~100%) | 6.6 | 8 | 10 | ms | |
| OVERCURRENT PROTECTION | ||||||
| IHS(OC) | High-side peak current limit | 3 | 4 | 5 | A | |
| Hiccup time before re-start | 13 | 16 | 20 | ms | ||
| OUTPUT MOSFET | ||||||
| RDSON(HS) | High-side MOSFET on-resistance | VIN = 12 V, VBOOT-SW = 4.5 V | 100 | 230 | mΩ | |
| RDSON(HS) | High-side MOSFET on-resistance | VIN = 5.5 V, VBOOT-SW = 4.0 V | 125 | mΩ | ||
| THERMAL SHUTDOWN | ||||||
| TJ(SD) | Thermal shutdown threshold (1) | Temperature rising | 135 | 162 | °C | |
| TJ(HYS) | Thermal shutdown hysteresis (1) | 14 | °C | |||