ZHCSGV1C June 2017 – March 2018 TPS25740B
PRODUCTION DATA.
- 1 特性
- 2 應用
- 3 說明
- 4 修訂歷史記錄
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
- 7 Specifications
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3
Feature Description
- 8.3.1 ENSRC
- 8.3.2 USB Type-C CC Logic (CC1, CC2)
- 8.3.3 USB PD BMC Transmission (CC1, CC2, VTX)
- 8.3.4 USB PD BMC Reception (CC1, CC2)
- 8.3.5 Discharging (DSCG, VPWR)
- 8.3.6 Configuring Voltage Capabilities (HIPWR)
- 8.3.7 Configuring Power Capabilities (PSEL, PCTRL, HIPWR)
- 8.3.8 Gate Driver (GDNG, GDNS)
- 8.3.9 Fault Monitoring and Protection
- 8.3.10 Voltage Control (CTL1, CTL2,CTL3)
- 8.3.11 Sink Attachment Indicator (DVDD)
- 8.3.12 Power Supplies (VAUX, VDD, VPWR, DVDD)
- 8.3.13 Grounds (AGND, GND)
- 8.3.14 Output Power Supply (DVDD)
- 8.4 Device Functional Modes
-
9 Application and Implementation
- 9.1
Application Information
- 9.1.1 System-Level ESD Protection
- 9.1.2 Using ENSRC to Enable the Power Supply upon Sink Attachment
- 9.1.3 Use of GD Internal Clamp
- 9.1.4 Resistor Divider on GD for Programmable Start Up
- 9.1.5 Selection of the CTL1, CTL2, and CTL3 Resistors (R(FBL1), R(FBL2), and R(FBL3))
- 9.1.6 Voltage Transition Requirements
- 9.1.7 VBUS Slew Control using GDNG C(SLEW)
- 9.1.8 Tuning OCP using RF and CF
- 9.2 Typical Applications
- 9.3 System Examples
- 9.1
Application Information
- 10Power Supply Recommendations
- 11Layout
- 12器件和文檔支持
- 13機械、封裝和可訂購信息
9.1.8 Tuning OCP using RF and CF
In applications where there are load transients or moderate ripple on VOUT, the OCP performance of TPS25740B may be impacted. Adding the RF/CF filter network as shown in Figure 48 helps mitigate the impact of the ripple and load transients on OCP performance.
Figure 48. ISNS Filtering Example RF/CF can be tailored to the amount of ripple on VOUT as shown in Table 6.
Table 6. Ripple on VOUT
| FREQUENCY x RIPPLE (kHz x V) | SUGGESTED FILTER TIME CONSTANT (µs) |
|---|---|
| < 5 (Ex: 50 mV ripple at 100 kHz) | None |
| 5 to 15 | 2.2 µs ( RF = 10 Ω, CF = 220 nF) |
| 15 to 35 | 4.7 µs ( RF = 10 Ω, CF = 470 nF) |
| 35 to 105 | 10 µs ( RF = 10 Ω, CF = 1 µF) |