4 修訂歷史記錄
Changes from B Revision (November 2016) to C Revision
- Added 將“通過 UL 2367 認(rèn)證 – 文件編號(hào) E339631”添加到了特性 部分Go
Changes from A Revision (September 2015) to B Revision
Changes from * Revision (October 2013) to A Revision
- 添加了 ESD 額定值 表、詳細(xì)說明、特性 說明、器件功能模式、應(yīng)用和實(shí)施、電源建議、器件和文檔支持 以及機(jī)械、封裝和可訂購(gòu)信息Go
- 已刪除特性“FET 短路檢測(cè)（TPS24752，TPS24753）”Go
- 已更改應(yīng)用原理圖。已刪除 CVIN 和 D1Go
- Deleted devices TPS24752 and TPS24753 from the data sheetGo
- Deleted list item from the Overview section: "Internal MOSFET short detection (TPS24752/3 only)"Go
- Removed notes for pin 30 and 31 from the Functional Block DiagramGo
- Deleted section Fault Detection of Internal Mosfet ShortGo
- Changed Figure 40. Deleted CVIN and D1Go
- Changed text in STEP 3. Choose Output Voltage Rising Time, tON, and Timing Capacitor CT From: "maximum steady state junction temperature (TJDMAX = TA(MAX) + ILIM2 x R(DS)ON)." To: " maximum steady state junction temperature (TJDMAX = TA(MAX) + ILIM2 x R(DS)ON x RθJA)."Go
- Changed Figure 46 and Figure 47. Deleted CVIN and D1Go
- Added text and Figure 48 to System ExamplesGo
- Changed Figure 51Go
- Added Figure 52Go