ZHCSJZ7B june 2019 – february 2023 TPS1HB35-Q1
PRODUCTION DATA
Figure 10-1 shows the schematic of a typical application for version A or B of the TPS1HB35-Q1. It includes all standard external components. This section of the data sheet discusses the considerations in implementing commonly required application functionality. Version F of the device will replace the ILIM pin with the open drain FLT pin. In this case, the FLT pin must be connected to a 5-V rail through a 10-kΩ pull up resistor.

| COMPONENT | TYPICAL VALUE | PURPOSE |
|---|---|---|
| RPROT | 15 kΩ | Protect microcontroller and device I/O pins. |
| RSNS | 1 kΩ | Translate the sense current into sense voltage. |
| CSNS | 100 pF – 10 nF | Low-pass filter for the ADC input. |
| RGND | 4.7 kΩ | Stabilize GND potential during turn-off of inductive load. |
| DGND | BAS21 Diode | Protects device during reverse battery. |
| RILIM | 5 kΩ – 25 kΩ | Set current limit threshold. |
| CVBB1 | 4.7 nF to Device GND | Filtering of voltage transients (for example, ESD, ISO7637-2) and improved emissions. |
| CVBB2 | 220 nF to Module GND | Stabilize the input supply and filter out low frequency noise. |
| COUT | 220 nF | Filtering of voltage transients (for example, ESD, ISO7637-2). |