ZHCSIV1F September 2018 – February 2023 TPS1663
PRODUCTION DATA
- 1 特性
- 2 應用
- 3 說明
- 4 Revision History
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
- 7 Specifications
- 8 Parameter Measurement Information
-
9 Detailed Description
- 9.1 Overview
- 9.2 Functional Block Diagram
- 9.3
Feature Description
- 9.3.1 Hot Plug-In and In-Rush Current Control
- 9.3.2 Undervoltage Lockout (UVLO)
- 9.3.3 Overvoltage Protection (OVP)
- 9.3.4 Overload and Short Circuit Protection
- 9.3.5 Output Power Limiting, PLIM (TPS16632 Only)
- 9.3.6 Current Monitoring Output (IMON)
- 9.3.7 FAULT Response (FLT)
- 9.3.8 Power Good Output (PGOOD)
- 9.3.9 IN, P_IN, OUT and GND Pins
- 9.3.10 Thermal Shutdown
- 9.3.11 Low Current Shutdown Control (SHDN)
- 9.4 Device Functional Modes
- 10Application and Implementation
- 11Device and Documentation Support
- 12Mechanical, Packaging, and Orderable Information
封裝選項
請參考 PDF 數據表獲取器件具體的封裝圖。
機械數據 (封裝 | 引腳)
- RGE|24
- PWP|20
散熱焊盤機械數據 (封裝 | 引腳)
訂購信息
9.3.4.2 Short Circuit Protection
During a transient output short circuit event, the current through the device increases rapidly. As the current-limit amplifier cannot respond quickly to this event due to its limited bandwidth, the device incorporates a fast-trip comparator. The fast-trip comparator architecture is designed for fast turn OFF tFASTTRIP(dly) = 1 μs (typical) with I(SCP) = 45 A of the internal FET during an output short circuit event. The fast-trip threshold is internally set to I(FASTTRIP). The fast-trip circuit holds the internal FET off for only a few microseconds, after which the device turns back on slowly, allowing the current-limit loop to regulate the output current to I(OL). Then the device functions similar to the overload condition. Figure 9-8 illustrates output hot-short performance of the device.
| VIN = 50 V | RILIM = 18 kΩ |
The fast-trip comparator architecture has a supply line noise immunity resulting in a robust performance in noisy environments. This supply line noise immunity is achieved by controlling the turn OFF time of the internal FET based on the overcurrent level, I(FASTTRIP), through the device. The higher the overcurrent, the faster the turn OFF time, tFASTTRIP(dly). At Overload current level in the range of IFASTTRIP < IOUT < ISCP, the fast-trip comparator response is 3.2 μs (typical).