9 Revision History
Changes from Revision D (October 2023) to Revision E (October 2024)
Changes from Revision C (July 2014) to Revision D (October 2023)
- 更新了整個文檔中的表格、圖和交叉參考的編號格式Go
- 更新了封裝信息 表以包含封裝引線尺寸Go
- Updated the Feature Description sectionGo
- Updated the Bi-directional (ESD) Protection Diode Array
sectionGo
Changes from Revision B (May 2014) to Revision C (July 2014)
- Changed 2 device names from TPD4E6B06 to TPD4E1B06
Go
Changes from Revision A (January 2013) to Revision B (May 2014)
- 向數據表添加了 DRL 封裝Go
- Changed IPP, peak pulse current from 3.5 A to 3.0 A.Go
- Added the ESD Ratings tableGo
- Added Recommended Operating Conditions table.Go
- Changed Electrical Characteristics table to reflect operating
conditions at 25 °C.Go
- Added MIN VRWM value of –5.5 V.Go
- Changed VCLAMP at IPP = 1 A from 10.5 V to
10.9 V. Go
- Changed Line Capacitance TYP value from 1 pF to 0.7
pF.Go
- Added Line Capacitance MAX value of 0.95 pF. Go
- Changed ILEAK from MAX of 10 nA to 0.5 nA Go
Changes from Revision * (December 2012) to Revision A (January 2013)
- Fixed "f" units typo from GHz to MHz for CL parameter in
ELECTRICAL CHARACTERISTICS table.Go