ZHCS821G February 2012 – August 2024 TPD1E10B06
PRODUCTION DATA
| PARAMETER | TEST CONDITION | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| VRWM | Reverse stand-off voltage | Pin 1 to 2 or Pin 2 to 1 | 5.5 | V | ||
| ILEAK | Leakage current | Pin 1 = 5 V, Pin 2 = 0 V | 100 | nA | ||
| VClamp1,2 | Clamp voltage with surge strike on pin 1, pin 2 grounded. | IPP = 1 A, tp = 8/20 μs(2) | 10 | V | ||
| VClamp1,2 | Clamp voltage with surge strike on pin 1, pin 2 grounded. | IPP =5 A, tp = 8/20 μs(2) | 14 | V | ||
| VClamp2,1 | Clamp voltage with surge strike on pin 2, pin 1 grounded. | IPP = 1 A, tp = 8/20 μs(2) | 8.5 | V | ||
| IPP = 5 A, tp = 8/20 μs(2) | 14 | |||||
| RDYN | Dynamic resistance | Pin 1 to Pin 2(1) | 0.32 | Ω | ||
| Pin 2 to Pin 1(1) | 0.38 | |||||
| CIO | I/O capacitance | VIO = 2.5 V; ? = 1 MHz | 12 | pF | ||
| VBR1,2 | Break-down voltage, pin 1 to pin 2 | IIO = 1 mA | 6 | V | ||
| VBR2,1 | Break-down voltage, pin 2 to pin 1 | IIO = 1 mA | 6 | V | ||