ZHCSH92D December 2017 – June 2022 TLIN2022-Q1
PRODUCTION DATA
- 1 特性
- 2 應(yīng)用
- 3 說(shuō)明
- 4 Revision History
- 5 Pin Configuration and Functions
- 6 Specifications
-
7 Detailed Description
- 7.1 Overview
- 7.2 Functional Block Diagram
- 7.3
Feature Description
- 7.3.1 LIN (Local Interconnect Network) Bus
- 7.3.2 TXD (Transmit Input and Output)
- 7.3.3 RXD (Receive Output)
- 7.3.4 VSUP (Supply Voltage)
- 7.3.5 GND (Ground)
- 7.3.6 EN (Enable Input)
- 7.3.7 Protection Features
- 7.3.8 TXD Dominant Time Out (DTO)
- 7.3.9 Bus Stuck Dominant System Fault: False Wake Up Lockout
- 7.3.10 Thermal Shutdown
- 7.3.11 Under Voltage on VSUP
- 7.3.12 Unpowered Device and LIN Bus
- 7.4 Device Functional Modes
- 8 Application and Implementation
- 9 Device and Documentation Support
- 10Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
散熱焊盤(pán)機(jī)械數(shù)據(jù) (封裝 | 引腳)
- DMT|14
訂購(gòu)信息
9.5 Electrostatic Discharge Caution
 |
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. |
| ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. |