ZHCSEH3B December 2015 – September 2018 TAS5411-Q1
PRODUCTION DATA.
| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| Input voltage | DC supply voltage range, V(PVDD) | Relative to GND | –0.3 | 30 | V |
| Pulsed supply voltage range, V(PVDD_MAX) | t ≤ 400 ms exposure | –1 | 40 | ||
| Supply voltage ramp rate, ΔV(PVDD_RAMP) | 15 | V/ms | |||
| For SCL, SDA, STANDBY, FAULT pins | Relative to GND | –0.3 | 5 | V | |
| For IN_N, IN_P, and MUTE pins | Relative to GND | –0.3 | 6.5 | ||
| BYP | Relative to GND | –0.3 | 7 | ||
| BSTN, BSTP | Relative to GND | –0.3 | 36.3 | ||
| BSTN, BSTP | Relative to BYP | –0.3 | 30 | ||
| OUTN, OUTP | Relative to GND | –0.3 | 30 | ||
| Current | DC current on PVDD, GND and OUTx pins, I(PVDD), IO | ±4 | A | ||
| Maximum current, on all input pins, I(IN_MAX)(2) | ±1 | mA | |||
| Maximum sink current for open-drain pin, I(IN_ODMAX) | 7 | ||||
| Junction temperature, TJ | –40 | 150 | °C | ||
| Storage temperature, Tstg | –55 | 150 | °C | ||