4 Revision History
Changes from Revision E (April 2013) to Revision F (July 2023)
- 添加了 ESD 等級 表、概述 部分、特性說明 部分、器件功能模式 部分、應(yīng)用和實施 部分、典型應(yīng)用 部分、電源建議 部分、布局 部分、器件和文檔支持 部分，以及機械、封裝和可訂購信息 部分Go
- 在文檔中添加了新芯片（M3 后綴）信息Go
- 更改了文檔標(biāo)題以及特性、應(yīng)用 和說明 部分Go
- 刪除了應(yīng)用提示 部分Go
- Changed Pin Configuration and Functions title and
sectionGo
- Changed title, condition statement, and curve titles and added
curves for new chip in Typical Characteristics sectionGo
- Changed Functional Block Diagram figureGo
- Added Output Enable sectionGo
- Added Dropout Voltage sectionGo
- Added Current Limit sectionGo
- Added Undervoltage Lockout (UVLO) sectionGo
- Added Output Pulldown sectionGo
- Added Thermal Shutdown sectionGo
- Added Device Functional Mode Comparison
sectionGo
- Added External Feedback Resistors sectionGo
- Added Recommended Capacitor
Types sectionGo
- Added Input and Output Capacitor
Requirements sectionGo
- Added Feed-Forward Capacitor
(CFF) sectionGo
- Added Reverse Current
sectionGo
- Added Power Dissipation
(PD) sectionGo
- Added Estimating Junction Temperature
sectionGo
- Added Setting VOUT For the LP2980-ADJ LDO sectionGo
- Added Device Nomenclature sectionGo
Changes from Revision D (April 2013) to Revision E (April 2013)
- Changed layout of National Data Sheet to TI formatGo