ZHCSF93E December 2015 – August 2020 LMR23630
PRODUCTION DATA
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| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| POWER SUPPLY (VIN PIN) | ||||||
| VIN | Operation input voltage | 4 | 36 | V | ||
| VIN_UVLO | Undervoltage lockout thresholds | Rising threshold | 3.3 | 3.7 | 3.9 | V |
| Falling threshold | 2.9 | 3.3 | 3.5 | |||
| ISHDN | Shutdown supply current | 2 | 4 | μA | ||
| VEN = 0 V, VIN = 12 V, TJ = –40°C to 125°C | ||||||
| IQ | Operating quiescent current (non- switching) | VIN =12 V, VFB = 1.1 V, TJ = –40°C to 125°C, PFM mode | 75 | μA | ||
| ENABLE (EN/SYNC PIN) | ||||||
| VEN_H | Enable rising threshold voltage | 1.4 | 1.55 | 1.7 | V | |
| VEN_HYS | Enable hysteresis voltage | 0.4 | V | |||
| VWAKE | Wake-up threshold | 0.4 | V | |||
| IEN | Input leakage current at EN pin | VIN = 4 V to 36 V, VEN= 2 V | 10 | 100 | nA | |
| nA | ||||||
| VIN = 4 V to 36 V, VEN= 36 V | 1 | μA | ||||
| μA | ||||||
| VOLTAGE REFERENCE (FB PIN) | ||||||
| VREF | Reference voltage | VIN = 4.0 V to 36 V, TJ = 25 °C | 0.985 | 1 | 1.015 | V |
| VIN = 4.0 V to 36 V, TJ = –40°C to 125°C | 0.98 | 1 | 1.02 | V | ||
| ILKG_FB | Input leakage current at FB pin | VFB= 1 V | 10 | nA | ||
| POWER GOOD (PGOOD PIN) | ||||||
| VPG_OV | Power-good flag overvoltage tripping threshold | % of reference voltage | 104% | 107% | 110% | |
| VPG_UV | Power-good flag undervoltage tripping threshold | % of reference voltage | 92% | 94% | 96.5% | |
| VPG_HYS | Power-good flag recovery hysteresis | % of reference voltage | 1.5% | |||
| VIN_PG_MIN | Minimum VIN for valid PGOOD output | 50 μA pullup to PGOOD pin, VEN = 0 V, TJ = 25°C | 1.5 | V | ||
| VPG_LOW | PGOOD low level output voltage | 50 μA pullup to PGOOD pin, VIN = 1.5 V, VEN = 0 V | 0.4 | V | ||
| 0.5 mA pullup to PGOOD pin, VIN = 13.5 V, VEN = 0 V | 0.4 | V | ||||
| INTERNAL LDO (VCC PIN) | ||||||
| VCC | Internal LDO output voltage | 4.1 | V | |||
| VCC_UVLO | VCC undervoltage lockout thresholds | Rising threshold | 2.8 | 3.2 | 3.6 | V |
| Falling threshold | 2.4 | 2.8 | 3.2 | |||
| CURRENT LIMIT | ||||||
| IHS_LIMIT | Peak inductor current limit | HSOIC package | 3.8 | 5 | 6.2 | A |
| WSON package | 4 | 5.5 | 6.6 | |||
| ILS_LIMIT | Valley inductor current limit | HSOIC package | 2.9 | 3.6 | 4.6 | A |
| WSON package | 2.9 | 3.6 | 4.2 | |||
| IL_ZC | Zero cross current limit | HSOIC and WSON package | –0.04 | A | ||
| IL_NEG | Negative current limit (FPWM option) | SOIC and WSON package | –2.7 | –2 | –1.3 | A |
| INTEGRATED MOSFETS | ||||||
| RDS_ON_HS | High-side MOSFET ON-resistance | SOIC package, VIN = 12 V, IOUT = 1 A | 185 | m? | ||
| WSON package, VIN = 12 V, IOUT = 1 A | 160 | |||||
| RDS_ON_LS | Low-side MOSFET ON-resistance | SOIC package, VIN = 12 V, IOUT = 1 A | 105 | m? | ||
| WSON package, VIN = 12 V, IOUT = 1 A | 95 | |||||
| THERMAL SHUTDOWN | ||||||
| TSHDN | Thermal shutdown threshold | 162 | 170 | 178 | °C | |
| THYS | Hysteresis | 15 | °C | |||