ZHCSJY0B June 2012 – June 2019 LMR12015 , LMR12020
PRODUCTION DATA.
- 1 特性
- 2 應(yīng)用
- 3 說明
- 4 修訂歷史記錄
- 5 Pin Configuration and Functions
- 6 Specifications
- 7 Detailed Description
-
8 Application and Implementation
- 8.1 Application Information
- 8.2
Typical Application
- 8.2.1
Detailed Design Procedure
- 8.2.1.1 Custom Design With WEBENCH® Tools
- 8.2.1.2 Inductor Selection
- 8.2.1.3 Input Capacitor
- 8.2.1.4 Output Capacitor
- 8.2.1.5 Catch Diode
- 8.2.1.6 Boost Diode (Optional)
- 8.2.1.7 Boost Capacitor
- 8.2.1.8 Output Voltage
- 8.2.1.9 Feedforward Capacitor (Optional)
- 8.2.1.10
Calculating Efficiency and Junction Temperature
- 8.2.1.10.1 Schottky Diode Conduction Losses
- 8.2.1.10.2 Inductor Conduction Losses
- 8.2.1.10.3 MOSFET Conduction Losses
- 8.2.1.10.4 MOSFET Switching Losses
- 8.2.1.10.5 IC Quiescent Losses
- 8.2.1.10.6 MOSFET Driver Losses
- 8.2.1.10.7 Total Power Losses
- 8.2.1.10.8 Efficiency Calculation Example
- 8.2.1.10.9 Calculating the LMR2015/20 Junction Temperature
- 8.2.2 Application Curves
- 8.2.3 LMR12015/20 Circuit Examples
- 8.2.1
Detailed Design Procedure
- 9 Layout
- 10器件和文檔支持
- 11機(jī)械、封裝和可訂購信息
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- DSC|10
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
- DSC|10
訂購信息
10.6 靜電放電警告
ESD 可能會(huì)損壞該集成電路。德州儀器 (TI) 建議通過適當(dāng)?shù)念A(yù)防措施處理所有集成電路。如果不遵守正確的處理措施和安裝程序 , 可能會(huì)損壞集成電路。
ESD 的損壞小至導(dǎo)致微小的性能降級(jí) , 大至整個(gè)器件故障。 精密的集成電路可能更容易受到損壞 , 這是因?yàn)榉浅＜?xì)微的參數(shù)更改都可能會(huì)導(dǎo)致器件與其發(fā)布的規(guī)格不相符。