ZHCSJF9A March 2019 – June 2019 LMG3410R150 , LMG3411R150
ADVANCE INFORMATION for pre-production products; subject to change without notice.
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| GaN FET | ||||||
| dv/dt | Turn-on Drain Slew Rate | RDRV = 15 kΩ, IL = 3 A | 100 | V/ns | ||
| RDRV = 55 kΩ, IL = 3 A | 50 | |||||
| RDRV = 150 kΩ, IL = 3 A | 25 | |||||
| Δdv/dt | Slew Rate Variation | turn on, IL = 3 A, RDRV = 15 kΩ | 25 | % | ||
| dv/dt | Edge Rate Immunity | Drain dv/dt, device remains off inductor-fed, max di/dt = 10 A/ns | 150 | V/ns | ||
| STARTUP | ||||||
| tSTART | Startup Time, VIN rising above UVLO | Time until gate responds to IN CNEG = 1 µF, CLDO = 0 µF | 600 | µs | ||
| DRIVER | ||||||
| tpd,on | Propagation delay, turn on | IN rising to IDS > 1 A, VDS = 100 V RDRV = 15 kΩ, VNEG = -14 V | 14.4 | ns | ||
| tdelay,on | Turn on delay time | IDS > 1 A to VDS < 320 V, RDRV = 15kΩ | 4.4 | ns | ||
| tVDS,ft | VDS fall time | VDS = 320 V to VDS = 80 V, ID = 3 A | 2.7 | ns | ||
| tpd,off | Propagation delay, turn off | IN falling to VDS > 10 V; ID = 3 A | 17.4 | ns | ||
| tdelay,off | Turn off delay time | VDS = 10 V to VDS = 80 V, ID = 3 A | 5.5 | ns | ||
| tVDS,rt | VDS rise time | VDS = 80 V to VDS = 320 V, ID = 3 A | 11.7 | ns | ||
| FAULT | ||||||
| tcurr | Current Fault Delay | IDS > ITH to FAULT low | 50 | ns | ||
| tblank | Current Fault Blanking Time | VIN>VIH to end of blanking, RDRV=15kΩ | 55 | ns | ||
| treset | Fault reset time | IN held low | 250 | 350 | 500 | µs |