ZHCSIU1A September   2018  – March 2019 LMG3410R050 , LMG3411R050

ADVANCE INFORMATION for pre-production products; subject to change without notice.  

1. 1 特性
2. 2 應(yīng)用
3. 3 說明
   1.     Device Images
      1.      簡化方框圖
      2.      高于 100V/ns 時(shí)的開關(guān)性能
4. 4 修訂歷史記錄
5. 5 Pin Configuration and Functions
   1.     Pin Functions
6. 6 Specifications
   1. 6.1 Absolute Maximum Ratings
   2. 6.2 ESD Ratings
   3. 6.3 Recommended Operating Conditions
   4. 6.4 Thermal Information
   5. 6.5 Electrical Characteristics
   6. 6.6 Switching Characteristics
7. 7 Parameter Measurement Information
   1. 7.1 Switching Parameters
      1. 7.1.1 Turn-on Delays
      2. 7.1.2 Turn-off Delays
      3. 7.1.3 Drain Slew Rate
8. 8 Detailed Description
   1. 8.1 Overview
   2. 8.2 Functional Block Diagram
   3. 8.3 Feature Description
      1. 8.3.1 Direct-Drive GaN Architecture
      2. 8.3.2 Internal Buck-Boost DC-DC Converter
      3. 8.3.3 Internal Auxiliary LDO
      4. 8.3.4 Fault Detection
         1. 8.3.4.1 Over-current Protection
         2. 8.3.4.2 Over-Temperature Protection and UVLO
      5. 8.3.5 Drive Strength Adjustment
   4. 8.4 Device Functional Modes
      1. 8.4.1 Low-Power Mode
9. 9 Application and Implementation
   1. 9.1 Application Information
   2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
         1. 9.2.2.1 Slew Rate Selection
            1. 9.2.2.1.1 Startup and Slew Rate with Bootstrap High-Side Supply
         2. 9.2.2.2 Signal Level-Shifting
         3. 9.2.2.3 Buck-Boost Converter Design
      3. 9.2.3 Application Curves
   3. 9.3 Paralleling GaN Devices
   4. 9.4 Do's and Don'ts
10. 10Power Supply Recommendations
    1. 10.1 Using an Isolated Power Supply
    2. 10.2 Using a Bootstrap Diode
       1. 10.2.1 Diode Selection
       2. 10.2.2 Managing the Bootstrap Voltage
       3. 10.2.3 Reliable Bootstrap Start-up
11. 11Layout
    1. 11.1 Layout Guidelines
       1. 11.1.1 Power Loop Inductance
       2. 11.1.2 Signal Ground Connection
       3. 11.1.3 Bypass Capacitors
       4. 11.1.4 Switch-Node Capacitance
       5. 11.1.5 Signal Integrity
       6. 11.1.6 High-Voltage Spacing
       7. 11.1.7 Thermal Recommendations
    2. 11.2 Layout Example
12. 12器件和文檔支持
    1. 12.1 器件支持
       1. 12.1.1 第三方產(chǎn)品免責(zé)聲明
    2. 12.2 文檔支持
       1. 12.2.1 相關(guān)文檔
    3. 12.3 接收文檔更新通知
    4. 12.4 社區(qū)資源
    5. 12.5 商標(biāo)
    6. 12.6 靜電放電警告
    7. 12.7 術(shù)語表
13. 13機(jī)械、封裝和可訂購信息