ZHCSQT8 October 2023 LM74930-Q1
PRODUCTION DATA
LM74930-Q1 controls two N-channel power MOSFETs with DGATE used to control ideal diode MOSFET to emulate an ideal diode and HGATE controlling second MOSFET for power path cut-off when disabled or during system fault conditions such as overcurrent, overvoltage or undervoltage event. HGATE controlled MOSFET can be used to clamp the output during overvoltage or load dump conditions. LM74930-Q1 can be placed into low quiescent current mode using EN, where both DGATE and HGATE are turned OFF.
The device has a separate supply input pin (VS). The charge pump is derived from this supply input. With the separate supply input provision and separate GATE control architecture, the LM74930-Q1 device offers flexibility in system design architectures and enables circuit design with various power path control topologies like common source, ORing and Power MUXing. With these various topologies, the system designers can design the front-end power system to meet various system design requirements.