ZHCSLG2B September 2021 – August 2022 LM74722-Q1
PRODUCTION DATA
The LM74722-Q1 ideal diode controller drives and controls external back-to-back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON and OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. IQ during operation (EN = High) is < 35 μA and < 3.3 μA during shutdown mode (EN = Low). The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (GATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. A strong 30-mA boost regulator and short turn-ON and turn-OFF delay times of comparators ensures fast transient response ensuring robust and efficient MOSFET switching performance during automotive testing, such as ISO16750 or LV124, where an ECU is subjected to input short interruptions and AC superimpose input signals up to 200-kHz frequency. The device features an adjustable overvoltage cutoff protection feature for load dump protection.
The LM74722-Q1 controls the GATE of the MOSFET Q1 to regulate the forward voltage drop at 13 mV. The linear regulation scheme in these devices enables graceful control of the GATE voltage and turns off of the MOSFET during a reverse current event and ensures zero DC reverse current flow.
LM74722-Q1 PD gate drive can be used to drive load disconnect MOSFET (Q2). The back to back connected MOSFET configuration can be used when system requires overvoltage protection, inrush current protection or output load disconnect function.