ZHCSN09A June 2021 – September 2022 LM5168-Q1 , LM5169-Q1
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY | ||||||
| IQ(VIN) | VIN quiescent current | VEN = 2.5 V, PWM Operation | 420 | 880 | μA | |
| VEN = 2.5 V, PFM Operation | 10 | 25 | μA | |||
| IQ(STANDBY) | VIN standby current - LDO only | VEN = 1.25 V | 17 | 35 | μA | |
| ISD(VIN) | VIN shutdown supply current | VEN = 0 V, Tj=25°C | 3 | 6 | μA | |
| ENABLE | ||||||
| VEN(R) | EN voltage rising threshold | EN rising, enable switching | 1.45 | 1.5 | 1.55 | V |
| VEN(F) | EN voltage falling threshold | EN falling, disable switching | 1.35 | 1.4 | 1.44 | V |
| VSD(R) | EN standby rising threshold | EN rising, enable internal LDO, no switching. | 1.1 | V | ||
| VSD(F) | EN standby falling threshold | EN falling, disable internal LDO. | 0.45 | V | ||
| REFERENCE VOLTAGE | ||||||
| VFB | FB voltage | VFB falling | 1.181 | 1.2 | 1.218 | V |
| STARTUP | ||||||
| tSS | Internal fixed soft-start time | 1.75 | 3 | 4.75 | ms | |
| POWER STAGE | ||||||
| RDSON(HS) | High-side MOSFET on-resistance | ISW = –100 mA | 1.91 | Ω | ||
| RDSON(LS) | Low-side MOSFET on-resistance | ISW = 100 mA | 0.74 | Ω | ||
| tON(min) | Minimum ON pulse width | 50 | ns | |||
| tON(1) | On-time1 | VVIN = 6 V, RRT = 75 kΩ | 5000 | ns | ||
| tON(2) | On-time2 | VVIN = 6 V, RRT = 25 kΩ | 1650 | ns | ||
| tON(3) | On-time3 | VVIN = 12 V, RRT = 75 kΩ | 2550 | ns | ||
| tON(4) | On-time4 | VVIN = 12 V, RRT = 25 kΩ | 830 | ns | ||
| tOFF(min) | Minimum OFF pulse width | 50 | ns | |||
| BOOT CIRCUIT | ||||||
| VBOOT-SW(UV_R) | BOOT-SW UVLO rising threshold | VBOOT-SW rising | 2.6 | 3.4 | V | |
| OVERCURRENT PROTECTION | ||||||
| IHS_PK(OC) | High-side peak current limit | LM5168 | 0.356 | 0.42 | 0.484 | A |
| LM5169 | 0.71 | 0.84 | 0.94 | A | ||
| ILS_PK(OC) | Low-side peak current limit | LM5168 | 0.356 | 0.42 | 0.484 | A |
| LM5169 | 0.71 | 0.84 | 0.94 | A | ||
| IDELTA(OC) | Min of IHS_PK(OC) or ILS_PK(OC) minus ILS_V(OC) | LM5168 | 0.084 | A | ||
| LM5169 | 0.168 | A | ||||
| ILS(NOC) | Low-side negative current limit | LM5169 | 1.05 | 1.5 | 1.90 | A |
| LM5168 | 0.4 | 0.75 | 1.1 | A | ||
| ILS_V(OC) | Low-side valley current limit | LM5169 Low-side valley current limit on LS FET | 0.569 | 0.672 | 0.775 | A |
| LM5168 Low-side valley current limit on LS FET | 0.27 | 0.336 | 0.42 | A | ||
| IZC | Zero-cross detection current threshold | 0 | A | |||
| TW | Hiccup time before re-start | 64 | ms | |||
| POWER GOOD | ||||||
| VPGTH | Power Good threshold | FB falling, PG high to low | 1.055 | 1.08 | 1.1 | V |
| FB rising, PG low to high | 1.105 | 1.14 | 1.175 | V | ||
| RPG | Power Good threshold | VFB = 1 V | 7 | Ω | ||
| THERMAL SHUTDOWN | ||||||
| TJ(SD) | Thermal shutdown threshold (1) | Temperature rising | 175 | °C | ||
| TJ(HYS) | Thermal shutdown hysteresis (1) | 10 | °C | |||