ZHCSFE3B March 2016 – November 2017 LM5161
PRODUCTION DATA.
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY CURRENT | ||||||
| ISD | Input shutdown current | VIN = 48 V, EN/UVLO = 0 V | 50 | 90 | µA | |
| IOP | Input operating current | VIN = 48 V, FB = 3 V, Non-switching | 2.3 | 2.8 | mA | |
| VCC SUPPLY | ||||||
| VCC | Bias regulator output | VIN = 48 V, ICC = 20 mA | 6.3 | 7.3 | 8.5 | V |
| VCC | Bias regulator current limit | VIN = 48 V | 30 | mA | ||
| VCC(UV) | VCC undervoltage threshold | VCC rising | 3.98 | 4.1 | V | |
| VCC(HYS) | VCC undervoltage hysteresis | VCC falling | 185 | mV | ||
| VCC(LDO) | VIN - VCC dropout voltage | VIN = 4.5 V, ICC = 20 mA | 200 | 340 | mV | |
| HIGH-SIDE FET | ||||||
| RDS(ON) | High-side on resistance | V(BST - SW) = 7 V, ISW = 0.5A | 0.58 | Ω | ||
| BST(UV) | Bootstrap gate drive UV | V(BST - SW) rising | 2.93 | 3.6 | V | |
| BST(HYS) | Gate drive UV hysteresis | V(BST - SW) falling | 200 | mV | ||
| LOW-SIDE FET | ||||||
| RDS(ON) | Low-side on resistance | ISW = 0.5 A | 0.24 | Ω | ||
| HIGH-SIDE CURRENT LIMIT | ||||||
| ILIM(HS) | High-side current limit threshold | 1.3 | 1.61 | 1.9 | A | |
| TRES | Current limit response time | ILIM(HS)threshold detect to FET turn-off | 100 | ns | ||
| TOFF | Current limit forced off-time | FB = 0 V, VIN = 72 V | 13 | 16.5 | 21 | µs |
| TOFF1 | Current limit forced off-time | FB = 0.1 V, VIN = 72 V | 10 | 13 | 17 | µs |
| TOFF2 | Current limit forced off-time | FB = 1 V, VIN = 72 V | 2 | 2.7 | 4.1 | µs |
| LOW-SIDE CURRENT LIMIT | ||||||
| ISOURCE(LS) | Sourcing current limit | 1.3 | 1.6 | 1.9 | A | |
| ISINK(LS) | Sinking current limit | 3 | ||||
| DIODE EMULATION | ||||||
| VFPWM(LOW) | FPWM input logic low | VIN = 48 V | 1 | V | ||
| VFPWM(HIGH) | FPWM input logic high | VIN = 48 V | 3 | |||
| IZX | Zero cross detect current | FPWM = 0 (Diode emulation) | 22.5 | mA | ||
| REGULATION COMPARATOR | ||||||
| VREF | FB regulation level | VIN = 48 V | 1.975 | 2 | 2.015 | V |
| I(BIAS) | FB input bias current | VIN = 48 V | 100 | nA | ||
| ERROR CORRECTION AMPLIFIER AND SOFT START | ||||||
| GM | Error amp transconductance | FB = VREF (±) 10 mV | 100 | µA/V | ||
| IEA(SOURCE) | Error amp source current | FB = 1 V, SS = 1 V | 7.5 | 10 | 12.5 | µA |
| IEA(SINK) | Error amp sink current | FB = 5 V, SS = 2.25 V | 7.5 | 10 | 12.5 | |
| V(SS-FB) | VSS - VFB clamp voltage | FB = 1.75 V, CSS= 1 nF | 135 | mV | ||
| ISS | Soft-start charging current | SS = 0.5 V | 7.5 | 10 | 12.5 | µA |
| ENABLE/UVLO | ||||||
| VUVLO(TH) | UVLO threshold | EN/UVLO rising | 1.195 | 1.24 | 1.272 | V |
| IUVLO(HYS) | UVLO hysteresis current | EN/UVLO = 1.4 V | 15 | 20 | 25 | µA |
| VSD(TH) | Shutdown mode threshold | EN/UVLO falling | 0.29 | 0.35 | V | |
| VSD(HYS) | Shutdown threshold hysteresis | EN/UVLO rising | 50 | mV | ||
| THERMAL SHUTDOWN | ||||||
| TSD | Thermal shutdown threshold | 175 | °C | |||
| TSD(HYS) | Thermal shutdown hysteresis | 20 | °C | |||