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ZHCSGN4B December 2016 – April 2017 LDC2112 , LDC2114

PRODUCTION DATA.

封裝選項

機械數據 (封裝 | 引腳)

YFD|16
- MXBG351
PW|16
- MPDS361B

散熱焊盤機械數據 (封裝 | 引腳)

訂購信息

6 Specifications

6.1 Absolute Maximum Ratings

Over operating temperature range unless otherwise noted.⁽¹⁾

		MIN	MAX	UNIT
V_DD	Supply voltage		2.2	V
V_I	Voltage on SCL, SDA	–0.3	3.6	V
V_I	Voltage on any other pin	–0.3	2.2⁽²⁾	V
T_J	Junction temperature	–40	85	℃
T_STG	Storage temperature	–65	125	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Maximum voltage across any two pins (not including SCL or SDA) is V_DD + 0.3 V.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±1000	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±250	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

Over operating temperature range unless otherwise noted.

		MIN	NOM	MAX	UNIT
V_DD	Supply voltage	1.71		1.89	V
T_J	Junction temperature	–40		85	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		LDC2112/LDC2114		UNIT
		DSBGA	TSSOP
		16 PINS	16 PINS
R_θJA	Junction-to-ambient thermal resistance	81.8	105.1	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	0.4	40.3	°C/W
R_θJB	Junction-to-board thermal resistance	18.2	50.2	°C/W
Ψ_JT	Junction-to-top characterization parameter	0.3	3.6	°C/W
Ψ_JB	Junction-to-board characterization parameter	18	49.6	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

Over operating temperature range unless otherwise noted. V_DD = 1.8 V, T_J = 25 °C.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
POWER
V_DD	Supply voltage		1.71	1.8	1.89	V
I_DDNP	Normal power mode supply current (4 channels)⁽¹⁾⁽²⁾⁽³⁾	4 channels, 40 SPS per channel, 1 ms sampling window per channel, LPWRB = V_DD		0.49		mA
I_DDNP	Normal power mode supply current (2 channels)⁽¹⁾⁽²⁾	2 channels, 40 SPS per channel, 1 ms sampling window per channel, LPWRB = V_DD		0.26		mA
I_DDLP	Low power mode supply current⁽¹⁾⁽²⁾	1 channel, 1.25 SPS per channel, 1 ms sampling window per channel, LPWRB = Ground		9		µA
I_DDSB	Standby supply current	No button active (EN = 0x00)		5	7	µA
SENSOR
I_{SENSOR, MAX}	Sensor maximum current drive	Registers SENSORn_CONFIG: RPn = 0 ⁽⁴⁾		2.5		mA
R_{P, MIN}	Sensor minimum parallel resonant impedance			350		Ω
R_{P, MAX}	Sensor maximum parallel resonant impedance			10		kΩ
f_SENSOR	Sensor resonant frequency		1		30	MHz
Q_{SENSOR, MIN}	Sensor minimum quality factor			5
Q_{SENSOR, MAX}	Sensor maximum quality factor			30
V_{SENSOR, PP}	Sensor oscillation peak-to-peak voltage	Measured on the INn⁽⁴⁾ pins with reference to COM.		0.9		V
C_IN	Sensor input pin capacitance			17		pF
CONVERTER
SR_{NP, MIN}	Minimum normal power mode scan rate⁽⁵⁾	LPWRB = V_DD	7	10	13	SPS
SR_{NP, MAX}	Maximum normal power mode scan rate⁽⁵⁾	LPWRB = V_DD	56	80	104	SPS
SR_{LP, MIN}	Minimum low power mode scan rate⁽⁵⁾	LPWRB = Ground	0.438	0.625	0.813	SPS
SR_{LP, MAX}	Maximum low power mode scan rate⁽⁵⁾	LPWRB = Ground	3.5	5	6.5	SPS
Resolution	Data code width			12		Bits

(1) Sensor configuration: L_SENSOR = 0.85 µH, C_SENSOR = 58 pF, Q_SENSOR = 11, R_P = 0.7 kΩ.

(2) I²C communication and pull-up resistors current is not included.

(3) Four-channel supply current is applicable to LDC2114 only.

(4) The italic n is the channel index, i.e., n = 0 or 1 for LDC2112; n = 0, 1, 2, or 3 for LDC2114.

(5) For typical distribution of the scan rates, refer to Figure 9.

6.6 Digital Interface

Over operating temperature range unless otherwise noted. V_DD = 1.8 V, T_J = 25 °C. Pins: LPWRB, INTB, OUT0, OUT1, OUT2, OUT3, and ADDR.

PARAMETER		TEST CONDITIONS	MIN	MAX	UNIT
VOLTAGE LEVELS
V_IH	Input high voltage		0.8 × V_DD		V
V_IL	Input low voltage			0.2 × V_DD	V
V_OH	Output high voltage	I_SOURCE = 400 µA	0.8 × V_DD		V
V_OL	Output low voltage	I_SINK = 400 µA		0.2 × V_DD	V
I_L	Digital input leakage current		–500	500	nA

6.7 I²C Interface

			MIN	MAX	UNIT
VOLTAGE LEVELS
V_IH	Input high voltage		0.7 × V_DD		V
V_IL	Input low voltage			0.3 × V_DD	V
V_OL	Output low voltage	3 mA sink current		0.2 × V_DD	V
HYS	Hysteresis⁽¹⁾		0.05 × V_DD		V
I²C TIMING CHARACTERISTICS
f_SCL	Clock frequency			400	kHz
t_LOW	Clock low time		1.3		µs
t_HIGH	Clock high time		0.6		µs
t_HD;STA	Hold time repeated START condition	After this period, the first clock pulse is generated.	0.6		µs
t_SU;STA	Set-up time for a repeated START condition		0.6		µs
t_HD;DAT	Data hold time		0		µs
t_SU;DAT	Data set-up time		100		ns
t_SU;STO	Set-up time for STOP condition		0.6		µs
t_BUF	Bus free time between a STOP and START condition		1.3		µs
t_VD;DAT	Data valid time			0.9	µs
t_VD;ACK	Data valid acknowledge time			0.9	µs
t_SP	Pulse width of spikes that must be suppressed by the input filter⁽¹⁾			50	ns

(1) This parameter is specified by design and/or characterization and is not tested in production.

LDC2112 LDC2114 ldc2114-i2c-timing-snosd15.gif

Figure 1. I²C Timing Diagram

6.8 Typical Characteristics

Over recommended operating conditions unless specified otherwise. V_DD = 1.8 V, T_J = 25 °C. One channel enabled with a button sampling window of 1 ms unless specified otherwise.