ZHCSE64C august 2015 – may 2023 ISO5452
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| VOLTAGE SUPPLY | |||||||
| VIT+(UVLO1) | Positive-going UVLO1 threshold voltage input side (VCC1 – GND1) | 2.25 | V | ||||
| VIT-(UVLO1) | Negative-going UVLO1 threshold voltage input side (VCC1 – GND1) | 1.7 | V | ||||
| VHYS(UVLO1) | UVLO1 Hysteresis voltage (VIT+ – VIT–) input side | TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 0.2 | V | |||
| VIT+(UVLO2) | Positive-going UVLO2 threshold voltage output side (VCC2 – GND2) | 13 | V | ||||
| TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 12 | ||||||
| VIT-(UVLO2) | Negative-going UVLO2 threshold voltage output side (VCC2 – GND2) | 9.5 | V | ||||
| TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 11 | ||||||
| VHYS(UVLO2) | UVLO2 Hysteresis voltage (VIT+ – VIT–) output side | TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 1 | V | |||
| IQ1 | Input supply quiescent current | 4.5 | mA | ||||
| TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 2.8 | ||||||
| IQ2 | Output supply quiescent current | 6 | mA | ||||
| TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 3.6 | ||||||
| LOGIC I/O | |||||||
| VIT+(IN, RST) | Positive-going input threshold voltage (IN+, IN–, RST) | 0.7 × VCC1 | V | ||||
| VIT-(IN, RST) | Negative-going input threshold voltage (IN+, IN–, RST) | 0.3 × VCC1 | V | ||||
| VHYS(IN, RST) | Input hysteresis voltage (IN+, IN–, RST) | TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 0.15 × VCC1 | V | |||
| IIH | High-level input leakage at (IN+)(1) | IN+ = VCC1, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 100 | μA | |||
| IIL | Low-level input leakage at (IN–, RST)(2) | IN– = GND1, RST = GND1, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | –100 | μA | |||
| IPU | Pullup current of FLT, RDY | V(RDY) = GND1, V(FLT) = GND1, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 100 | μA | |||
| VOL | Low-level output voltage at FLT, RDY | I(FLT) = 5 mA | 0.2 | V | |||
| GATE DRIVER STAGE | |||||||
| V(OUTPD) | Active output pulldown voltage | I(OUTH/L) = 200 mA, VCC2 = open | 2 | V | |||
| V(OUTH) | High-level output voltage | I(OUTH) = –20 mA | VCC2 – 0.5 | V | |||
| I(OUTH) = –20 mA, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | VCC2 – 0.24 | ||||||
| V(OUTL) | Low-level output voltage | I(OUTL) = 20 mA | VEE2 + 50 | mV | |||
| I(OUTL) = 20 mA, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | VEE2 + 13 | ||||||
| I(OUTH) | High-level output peak current | IN+ = high, IN– = low, V(OUTH) = VCC2 – 15 V | 1.5 | A | |||
| IN+ = high, IN– = low, V(OUTH) = VCC2 – 15 V, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 2.5 | ||||||
| I(OUTL) | Low-level output peak current | IN+ = low, IN– = high, V(OUTL) = VEE2 + 15 V | 3.4 | A | |||
| IN+ = low, IN– = high, V(OUTL) = VEE2 + 15 V, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 5 | ||||||
| I(OLF) | Low level output current during fault condition | TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 130 | mA | |||
| ACTIVE MILLER CLAMP | |||||||
| V(CLP) | Low-level clamp voltage | I(CLP) = 20 mA | VEE2 + 0.08 | V | |||
| I(CLP) = 20 mA, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | VEE2 + 0.015 | ||||||
| I(CLP) | Low-level clamp current | V(CLAMP) = VEE2 + 2.5 V | 1.6 | 3.3 | A | ||
| V(CLAMP) = VEE2 + 2.5 V, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 2.5 | ||||||
| V(CLTH) | Clamp threshold voltage | 1.6 | 2.5 | V | |||
| TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 2.1 | ||||||
| SHORT CIRCUIT CLAMPING | |||||||
| V(CLP_OUTH) | Clamping voltage (VOUTH – VCC2) | IN+ = high, IN– = low, tCLP = 10 μs, I(OUTH) = 500 mA | 1.1 | 1.3 | V | ||
| IN+ = high, IN– = low, tCLP = 10 μs, I(OUTH) = 500 mA, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | |||||||
| V(CLP_OUTL) | Clamping voltage (VOUTL – VCC2) | IN+ = high, IN– = low, tCLP = 10 μs, I(OUTL) = 500 mA | 1.3 | 1.5 | V | ||
| IN+ = high, IN– = low, tCLP = 10 μs, I(OUTL) = 500 mA, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | |||||||
| V(CLP_CLAMP) | Clamping voltage (VCLP – VCC2) | IN+ = high, IN– = low, tCLP = 10 μs, I(CLP) = 500 mA, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 1.3 | V | |||
| Clamping voltage at CLAMP | IN+ = High, IN– = Low, I(CLP) = 20 mA | 1.1 | V | ||||
| IN+ = High, IN– = Low, I(CLP) = 20 mA, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 0.7 | ||||||
| V(CLP_OUTL) | Clamping voltage at OUTL (VCLP - VCC2) | IN+ = High, IN– = Low, I(OUTL) = 20 mA | 1.1 | V | |||
| IN+ = High, IN– = Low, I(OUTL) = 20 mA, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 0.7 | ||||||
| DESAT PROTECTION | |||||||
| I(CHG) | Blanking capacitor charge current | V(DESAT) – GND2 = 2 V | 0.42 | 0.58 | mA | ||
| V(DESAT) – GND2 = 2 V, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 0.5 | ||||||
| I(DCHG) | Blanking capacitor discharge current | V(DESAT) – GND2 = 6 V | 9 | mA | |||
| V(DESAT) – GND2 = 6 V, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 14 | ||||||
| V(DSTH) | DESAT threshold voltage with respect to GND2 | 8.3 | 9.5 | V | |||
| TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 9 | ||||||
| V(DSL) | DESAT voltage with respect to GND2, when OUTH/L is driven low | 0.4 | 1 | V | |||