ZHCSRG7 January 2023 DRV2901
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | DRV2900 | UNIT | |||
|---|---|---|---|---|---|---|
| MIN | TYP | MAX | ||||
| Internal Voltage Regulator and Current Consumption | ||||||
| VREG | Voltage regulator, only used as a reference node | VDD = 12 V | 2.95 | 3.3 | 3.65 | V |
| IVDD | VDD supply current | Operating, 50% duty cycle | 10 | mA | ||
| Idle, reset mode | 6 | |||||
| IGVDD_X | Gate supply current per half-bridge | 50% duty cycle | 8 | mA | ||
| Reset mode | 0.3 | |||||
| IPVDD_X | Half-bridge idle current | 50% duty cycle, without output filter or load | 15 | mA | ||
| Reset mode, no switching | 500 | μA | ||||
| Output Stage MOSFETs | ||||||
| RDSon,LS | Drain-to-source resistance, LS | TJ = 25°C, includes metallization resistance, GVDD = 12 V | 90 | m? | ||
| RDSon,HS | Drain-to-source resistance, HS | TJ = 25°C, includes metallization resistance, GVDD = 12 V | 90 | m? | ||
| I/O Protection | ||||||
| Vuvp,G | Undervoltage protection limit, GVDD_X | 8.5 | V | |||
| Vuvp,hyst (1) | 400 | mV | ||||
| OTW(1) | Overtemperature warning | 115 | 125 | 135 | °C | |
| OTWHYST (1) | Temperature drop needed below OTW temp. for OTW to be inactive after the OTW event | 25 | °C | |||
| OTE(1) | Overtemperature error | 145 | 155 | 165 | °C | |
| OTE-OTWdifferential (1) | OTE-OTW differential | 25 | °C | |||
| OTEHYST (1) | A reset needs to occur for SD for be released following an OTE event. | 25 | °C | |||
| OLPC | Overload protection counter | FPWM = 384 kHz | 1.3 | ms | ||
| IOC | Overcurrent limit protection | Resistor—programmable, nominal, ROCP = 22 k? | 12 | A | ||
| IOCT | Overcurrent response time | Time from application of short condition to Hi-Z of affected 1/2 bridge | 250 | ns | ||
| ROCP | OC programming resistor range | Resistor tolerance = 5% | 22 | 69 | k? | |
| RPD | Internal pulldown resistor at the output of each half-bridge | Connected when RESET is active to provide bootstrap capacitor charge. Not used in SE mode | 1.0 | k? | ||
| Static Digital Specifications | ||||||
| VIH | High-level input voltage | PWM_A, PWM_B, RESET_AB | 2 | V | ||
| VIL | Low-level input voltage | 0.8 | V | |||
| Leakage | Input leakage current | -100 | 100 | μA | ||
| OTW/SHUTDOWN (SD) | ||||||
| RINT_PU | Internal pullup resistance, OTW to VREG, SD to VREG | 20 | 26 | 35 | k? | |
| VOH | High-level output voltage | Internal pullup resistor | 2.95 | 3.3 | 3.65 | V |
| External pullup of 4.7 k? to 5 V | 4.5 | 5 | ||||
| VOL | Low-level output voltage | IO = 4 mA | 0.2 | 0.4 | V | |
| FANOUT | Device fanout OTW, SD | No external pullup | 30 | Devices | ||