4 Revision History
Changes from Revision E (December 2017) to Revision F (February 2022)
- 將超薄型封裝要點中的厚度從 0.35mm 更改為 0.36mmGo
- 將超薄型封裝圖片中的厚度從 0.35mm 更新為 0.36mmGo
- Changed ultra-low profile image height from 0.35 mm to 0.36
mm.Go
- Added FemtoFET Surface Mount Guide note.Go
Changes from Revision D (October 2014) to Revision E (December 2017)
- 將“脈沖漏極電流”值從-10A 更改為-13.1A（位于絕對最大額定值 表中）Go
- 將“注釋 1”從“典型 RθJA = 85°C/W”更改為“典型 RθJA = 90°C/W”Go
- 將“注釋 2”從“脈沖持續時間 ≤ 300μs，占空比 ≤ 2%”更改為“脈沖持續時間 ≤ 100μs，占空比 ≤ 1%”Go
- Changed the typical RθJA values in the Thermal Information table Go
- Updated Figure 5-1. Go
- Updated Figure 5-10 with newly measured data. Go
- Updated all mechanical drawings, increased the size of the pads in the
Section 7.3
section. Go