ZHCS764B February 2012 – September 2022 CSD25211W1015
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| Static Characteristics | |||||||
| BVDSS | Drain-to-Source Voltage | VGS = 0 V, ID = –250 μA | –20 | V | |||
| BVGSS | Gate-to-Source Voltage | VDS = 0 V, IG = –250 μA | –6.1 | –7.2 | V | ||
| IDSS | Drain-to-Source Leakage Current | VGS = 0 V, VDS = –16 V | –1 | μA | |||
| IGSS | Gate-to-Source Leakage Current | VDS = 0 V, VGS = –6 V | –100 | nA | |||
| VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, ID = –250 μA | –0.5 | –0.8 | –1.1 | V | |
| RDS(on) | Drain-to-Source On Resistance | VGS = –2.5 V, ID = –1.5 A | 36 | 44 | m? | ||
| VGS = –4.5 V, ID = –1.5 A | 27 | 33 | m? | ||||
| gfs | Transconductance | VDS = –10 V, ID = –1.5 A | 12 | S | |||
| Dynamic Characteristics | |||||||
| CISS | Input Capacitance | VGS = 0 V, VDS = –10 V, ? = 1 MHz | 475 | 570 | pF | ||
| COSS | Output Capacitance | 234 | 281 | pF | |||
| CRSS | Reverse Transfer Capacitance | 10.5 | 13.1 | pF | |||
| Qg | Gate Charge Total (–4.5 V) | VDS = –10 V, ID = –1.5 A | 3.4 | 4.1 | nC | ||
| Qgd | Gate Charge Gate to Drain | 0.2 | nC | ||||
| Qgs | Gate Charge Gate to Source | 1.1 | nC | ||||
| Qg(th) | Gate Charge at Vth | 0.6 | nC | ||||
| QOSS | Output Charge | VDS = –10 V, VGS = 0 V | 3.8 | nC | |||
| td(on) | Turn On Delay Time | VDS = –10 V, VGS = –4.5 V,
ID = –1.5 A RG = 4 ? |
13.6 | ns | |||
| tr | Rise Time | 8.8 | ns | ||||
| td(off) | Turn Off Delay Time | 36.9 | ns | ||||
| tf | Fall Time | 14.2 | ns | ||||
| Diode Characteristics | |||||||
| VSD | Diode Forward Voltage | IS = –1.5 A, VGS = 0 V | –0.8 | –1 | V | ||
| Qrr | Reverse Recovery Charge | Vdd= –10 V, IF = –1.5 A, di/dt = 200 A/μs | 6.9 | nC | |||
| trr | Reverse Recovery Time | 11.6 | ns | ||||