ZHCSEX4B April 2016 – February 2022 CSD23280F3
PRODUCTION DATA
請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-source voltage | VGS = 0 V, IDS = –250 μA | –12 | V | |||
| IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = –9.6 V | –50 | nA | |||
| IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = –5 V | –25 | nA | |||
| VGS(th) | Gate-to-source threshold voltage | VDS = VGS, IDS = –250 μA | –0.40 | –0.65 | –0.95 | V | |
| RDS(on) | Drain-to-source on-resistance | VGS = –1.5 V, IDS = –0.1 A | 230 | 399 | m? | ||
| VGS = –1.8 V, IDS = –0.4 A | 180 | 250 | |||||
| VGS = –2.5 V, IDS = –0.4 A | 129 | 165 | |||||
| VGS = –4.5 V, IDS = –0.4 A | 97 | 116 | |||||
| gfs | Transconductance | VDS = –1.2 V, IDS = –0.4 A | 3 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Ciss | Input capacitance | VGS = 0 V, VDS = –6 V, ? = 1 MHz | 180 | 234 | pF | ||
| Coss | Output capacitance | 73 | 95 | pF | |||
| Crss | Reverse transfer Capacitance | 8.5 | 11.1 | pF | |||
| RG | Series gate resistance | 9 | ? | ||||
| Qg | Gate charge total (4.5 V) | VDS = –6 V, IDS = –0.4 A | 0.95 | 1.23 | nC | ||
| Qgd | Gate charge gate-to-drain | 0.068 | nC | ||||
| Qgs | Gate charge gate-to-source | 0.30 | nC | ||||
| Qg(th) | Gate charge at Vth | 0.15 | nC | ||||
| Qoss | Output charge | VDS = –6 V, VGS = 0 V | 1.07 | nC | |||
| td(on) | Turnon delay time | VDS = –6 V, VGS = –4.5 V, IDS = –0.4 A, RG = 0 ? | 8 | ns | |||
| tr | Rise time | 4 | ns | ||||
| td(off) | Turnoff delay time | 21 | ns | ||||
| tf | Fall time | 8 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode forward voltage | ISD = –0.4 A, VGS = 0 V | –0.73 | –1.0 | V | ||