ZHCSEX4B April 2016 – February 2022 CSD23280F3
PRODUCTION DATA
5.3 Typical MOSFET Characteristics
TA = 25°C (unless otherwise stated)
Figure 5-1 Saturation Characteristics
Figure 5-3 Transient Thermal Impedance
| VDS = –5 V | ||
| VDS = –6 V | ID = –0.4 A | ||
| ID = –250 μA | ||
| VGS = –4.5 V | ID = –0.4 A | ||
| Single pulse, max RθJA = 255°C/W | ||
Figure 5-5 Capacitance
Figure 5-7 On-State Resistance vs Gate-to-Source Voltage
Figure 5-9 Typical Diode Forward Voltage
Figure 5-11 Maximum Drain Current vs Temperature