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ZHCSHU6L march 2018 – august 2023 BQ77915

PRODUCTION DATA

封裝選項

機械數據 (封裝 | 引腳)

PW|24
- MPDS363A

散熱焊盤機械數據 (封裝 | 引腳)

訂購信息

9.1.1 Device Functionality Summary

Table 9-1 Device Functionality Summary

FAULT DESCRIPTOR		FAULT DETECTION THRESHOLD and DELAY OPTIONS		FAULT RECOVERY METHOD and SETTING OPTIONS
OV	Overvoltage	3 V to 4.575 V (25-mV step)	0.5, 1, 2, 4.5 s	Hysteresis	0, 100, 200, 400 mV
UV	Undervoltage	1.2 V to 3 V (100-mV step for < 2.5 V, 50-mV step for ≥ 2.5 V)	1, 2, 4.5, 9 s	Load removal + hysteresis	0, 200, 400, 800 mV
OW	Open wire (cell to pcb disconnection)	0 (disabled), 100 nA, 200 nA, 400 nA	4.5 s	Restore bad VCx to PCB connection	VCx > V_OW
OTD⁽¹⁾	Overtemperature during discharge	65°C or 70°C	4.5 s	Hysteresis or load removal + hysteresis	10°C
OTC⁽¹⁾	Overtemperature during charge	45°C or 50°C	4.5 s	Hysteresis	10°C
UTD⁽¹⁾	Undertemperature during discharge	–20°C or –10°C	4.5 s	Hysteresis	10°C
UTC⁽¹⁾	Undertemperature during charge	–5°C or 0°C	4.5 s	Hysteresis	10°C
OCC	Overcurrent during charge	5 mV to 80 mV (5-mV step)	10 ms	Timer auto-release and load detection, timer auto-release only, load detection only	250 ms or 500 ms
OCD1	Overcurrent1 during discharge	–10 mV to –85 mV (5-mV step)	10, 20, 45, 90, 180, 350, 700, 1420 ms	Timer auto-release and load removal, timer auto-release only, load removal only
OCD2	Overcurrent1 during discharge	–20 mV to –170 mV (10-mV step)	5, 10, 20, 45, 90, 180, 350, 700 ms
SCD	Short circuit discharge	–40 mV to –340 mV (20-mV step)	400, 960 μs
CTRC	CHG signal override control	Disable through external control or through CHG signal from the upper device in stack configuration	t_{CTRDEG_ON}	Enable through external control or through the CHG signal from the upper device in stack configuration	t_{CTRDEG_OFF}
CTRD	DSG signal override control	Disable through external control or through DSG signal from the upper device in stack configuration	t_{CTRDEG_ON}	Enable through external control or through the DSG signal from the upper device in stack configuration	t_{CTRDEG_OFF}

(1) These thresholds are target-based on temperature, but they are dependent on external components that could vary based on customer selections. The circuit is based on a 103AT NTC thermistor connected to TS and VSS, and a 10-kΩ resistor connected to VTB and TS. Actual thresholds are determined in mV; refers to the over- and undertemperature mV threshold in the Electrical Characteristics table.

Table 9-2 Cell Balancing Threshold Summary

NAME	Description	Options
V_START	Start threshold for cell balancing	3.5 V, 3.8 V
V_HYST	Hysteresis between overvoltage and full charge voltage range (VOV – VFC)	50 mV, 100 mV, 150 mV, 200 mV
V_STEP	Difference between the cell balancing threshold voltages (VCBTH – VCBTL)	50 mV, 100 mV, 150 mV, 200 mV