ZHCSJZ6F June 2019 – February 2025 BQ25618 , BQ25619
PRODUCTION DATA
- 1
- 1 特性
- 2 應(yīng)用
- 3 說明
- 4 說明（續(xù)）
- 5 Pin Configuration and Functions
- 6 Specifications
-
7 Detailed Description
- 7.1 Overview
- 7.2 Functional Block Diagram
- 7.3
Feature Description
- 7.3.1 Power-On-Reset (POR)
- 7.3.2 Device Power Up From Battery Without Input Source
- 7.3.3 Power Up From Input Source
- 7.3.4 Boost Mode Operation From Battery
- 7.3.5 Power Path Management
- 7.3.6 Battery Charging Management
- 7.3.7 Ship Mode and QON Pin
- 7.3.8 Status Outputs (STAT, INT , PMID_GOOD)
- 7.3.9 Protections
- 7.3.10 Serial Interface
- 7.4 Device Functional Modes
- 7.5 Register Maps
- 8 Application and Implementation
- 9 Power Supply Recommendations
- 10Layout
- 11Device and Documentation Support
- 12Revision History
- 13Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- YFF|30
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
訂購(gòu)信息
7.3.5.3 Supplement Mode
When the system voltage falls below the battery voltage, the BATFET turns on and the BATFET gate is regulated so that the minimum BATFET VDS stays at 30 mV when the current is low. This prevents oscillation from entering and exiting the supplement mode.
As the discharge current increases, the BATFET gate is regulated with a higher voltage to reduce RDSON until the BATFET is in full conduction. At this point onwards, the BATFET VDS linearly increases with discharge current. Figure 7-2 shows the V-I curve of the BATFET gate regulation operation. The BATFET turns off to exit supplement mode when the battery is below battery depletion threshold.
Figure 7-2 BAFET V-I
Curve