ZHCSKL0D December 2009 – December 2019 BQ24610 , BQ24617
PRODUCTION DATA.
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| OPERATING CONDITIONS | ||||||
| VVCC_OP | VCC input voltage operating range(610) | 5 | 28 | V | ||
| VCC input voltage operating range(617) | 5 | 24 | ||||
| QUIESCENT CURRENTS | ||||||
| IBAT | Total battery discharge current (sum of currents into VCC, BTST, PH, ACP, ACN, SRP, SRN, VFB), VFB ≤ 2.1 V | VVCC < VSRN, VVCC > VUVLO (SLEEP) | 15 | μA | ||
| Battery discharge current (sum of currents into BTST, PH, SRP, SRN, VFB), VFB ≤ 2.1 V | VVCC > VSRN, VVCC > VUVLO CE = LOW | 5 | ||||
| VVCC > VSRN, VVCC > VVCCLOW CE = HIGH, charge done | 5 | |||||
| IAC | Adapter supply current (current into VCC, ACP, ACN pin) | VVCC > VSRN, VVCC > VUVLO CE = LOW (IC quiescent current) | 1 | 1.5 | mA | |
| VVCC > VSRN, VVCC >VVCCLOW, CE = HIGH, charge done | 2 | 5 | ||||
| VVCC > VSRN, VVCC >VVCCLOW, CE = HIGH, charging, Qg_total = 20 nC | 25 | |||||
| CHARGE VOLTAGE REGULATION | ||||||
| VFB | Feedback regulation voltage | 2.1 | V | |||
| Charge voltage regulation accuracy | TJ = 0°C to 85°C | –0.5% | 0.5% | |||
| TJ = –40°C to 125°C | –0.7% | 0.7% | ||||
| IVFB | Leakage current into VFB pin | VFB = 2.1 V | 100 | nA | ||
| CURRENT REGULATION – FAST CHARGE | ||||||
| VISET1 | ISET1 voltage range | 2 | V | |||
| VIREG_CHG | SRP-SRN current-sense voltage range | VIREG_CHG = VSRP – VSRN | 100 | mV | ||
| KISET1 | Charge current set factor (amps of charge current per volt on ISET1 pin) | RSENSE = 10 mΩ | 5 | A/V | ||
| Charge current regulation accuracy | VIREG_CHG = 40 mV | –3% | 3% | |||
| VIREG_CHG = 20 mV | –4% | 4% | ||||
| VIREG_CHG = 5 mV | –25% | 25% | ||||
| VIREG_CHG = 1.5 mV (VSRN > 3.1 V) | –40% | 40% | ||||
| IISET1 | Leakage current into ISET1 pin | VISET1 = 2 V | 100 | nA | ||
| CURRENT REGULATION – PRECHARGE | ||||||
| VISET2 | ISET2 voltage range | 2 | V | |||
| KISET2 | Precharge current set factor (amps of precharge current per volt on ISET2 pin) | RSENSE = 10 mΩ | 1 | A/V | ||
| Precharge current regulation accuracy | VIREG_PRECH = 20 mV | –4% | 4% | |||
| VIREG_PRECH = 5 mV | –25% | 25% | ||||
| VIREG_PRECH = 1.5 mV (VSRN < 3.1 V) | –55% | 55% | ||||
| IISET2 | Leakage current into ISET2 pin | VISET2 = 2 V | 100 | nA | ||
| CHARGE TERMINATION | ||||||
| KTERM | Termination current set factor (amps of termination current per volt on ISET2 pin) | RSENSE = 10 mΩ | 1 | A/V | ||
| Termination current accuracy | VITERM = 20 mV | –4% | 4% | |||
| VITERM = 5 mV | –25% | 25% | ||||
| VITERM = 1.5 mV | –45% | 45% | ||||
| Deglitch time for termination (both edge) | 100 | ms | ||||
| tQUAL | Termination qualification time | VBAT > VRECH and ICHG<ITERM | 250 | ms | ||
| IQUAL | Termination qualification current | Discharge current once termination is detected | 2 | mA | ||
| INPUT CURRENT REGULATION | ||||||
| VACSET | ACSET voltage range | 2 | V | |||
| VIREG_DPM | ACP-ACN current-sense voltage range | VIREG_DPM = VACP – VACN | 100 | mV | ||
| KACSET | Input current set factor (amps of input current per volt on ACSET pin) | RSENSE = 10 mΩ | 5 | A/V | ||
| IACSET | Input current regulation accuracy leakage current in to ACSET pin | VIREG_DPM = 40 mV | –3% | 3% | ||
| VIREG_DPM = 20 mV | –4% | 4% | ||||
| VIREG_DPM = 5 mV | –25% | 25% | ||||
| IISET1 | Leakage current in to ACSET pin | VACSET = 2 V | 100 | nA | ||
| INPUT UNDERVOLTAGE LOCKOUT COMPARATOR (UVLO) | ||||||
| VUVLO | AC undervoltage rising threshold | Measure on VCC | 3.65 | 3.85 | 4 | V |
| VUVLO_HYS | AC undervoltage hysteresis, falling | 350 | mV | |||
| VCC LOWV COMPARATOR | ||||||
| Falling threshold, disable charge | Measure on VCC | 4.1 | V | |||
| Rising threshold, resume charge | 4.35 | 4.5 | V | |||
| SLEEP COMPARATOR (REVERSE DISCHARGING PROTECTION) | ||||||
| VSLEEP _FALL | SLEEP falling threshold | VVCC – VSRN to enter SLEEP | 40 | 100 | 150 | mV |
| VSLEEP_HYS | SLEEP hysteresis | 500 | mV | |||
| SLEEP rising delay | VCC falling below SRN, delay to turn off ACFET | 1 | μs | |||
| SLEEP falling delay | VCC rising above SRN, delay to turn on ACFET | 30 | μs | |||
| SLEEP rising shutdown deglitch | VCC falling below SRN, delay to enter SLEEP mode | 100 | ms | |||
| SLEEP falling power-up deglitch | VCC rising above SRN, delay to exit SLEEP mode | 30 | ms | |||
| ACN / SRN COMPARATOR | ||||||
| VACN-SRN_FALL | ACN to SRN falling threshold | VACN – VSRN to turn on BATFET | 100 | 200 | 310 | mV |
| VACN-SRN_HYS | ACN to SRN rising hysteresis | 100 | mV | |||
| ACN to SRN rising deglitch | VACN – VSRN > VACN-SRN_RISE | 2 | ms | |||
| ACN to SRN falling deglitch | VACN – VSRN < VACN-SRN_FALL | 50 | μs | |||
| BAT LOWV COMPARATOR | ||||||
| VLOWV | Precharge to fast-charge transition (LOWV threshold) | Measured on VFB pin, rising | 1.534 | 1.55 | 1.566 | V |
| VLOWV_HYS | LOWV hysteresis | 100 | mV | |||
| LOWV rising deglitch | VFB falling below VLOWV | 25 | ms | |||
| LOWV falling deglitch | VFB rising above VLOWV + VLOWV_HYS | 25 | ms | |||
| RECHARGE COMPARATOR | ||||||
| VRECHG | Recharge threshold (with-respect-to VREG) | Measured on VFB pin, falling | 35 | 50 | 65 | mV |
| Recharge rising deglitch | VFB decreasing below VRECHG | 10 | ms | |||
| Recharge falling deglitch | VFB decreasing above VRECHG | 10 | ms | |||
| BAT OVERVOLTAGE COMPARATOR | ||||||
| VOV_RISE | Overvoltage rising threshold | As percentage of VFB | 104% | |||
| VOV_FALL | Overvoltage falling threshold | As percentage of VFB | 102% | |||
| INPUT OVERVOLTAGE COMPARATOR (ACOV) | ||||||
| VACOV | AC overvoltage rising threshold on VCC (BQ24610) | 31.04 | 32 | 32.96 | V | |
| VACOV_HYS | AC overvoltage falling hysteresis (BQ24610) | 1 | V | |||
| VACOV | AC overvoltage rising threshold on VCC (BQ24617) | 25.22 | 26 | 26.78 | V | |
| VACOV_HYS | AC overvoltage falling hysteresis(BQ24617) | 820 | mV | |||
| AC overvoltage deglitch (both edge) | Delay to changing the STAT pins | 1 | ms | |||
| AC overvoltage rising deglitch | Delay to disable charge | 1 | ms | |||
| AC overvoltage falling deglitch | Delay to resume charge | 20 | ms | |||
| THERMAL SHUTDOWN COMPARATOR | ||||||
| TSHUT | Thermal shutdown rising temperature | Temperature increasing | 145 | °C | ||
| TSHUT_HYS | Thermal shutdown hysteresis | 15 | °C | |||
| Thermal shutdown rising deglitch | Temperature increasing | 100 | μs | |||
| Thermal shutdown falling deglitch | Temperature decreasing | 10 | ms | |||
| THERMISTOR COMPARATOR | ||||||
| VLTF | Cold temperature rising threshold | As Percentage to VVREF | 72.5% | 73.5% | 74.5% | |
| VLTF_HYS | Rising hysteresis | As Percentage to VVREF | 0.2% | 0.4% | 0.6% | |
| VHTF | Hot temperature rising threshold | As Percentage to VVREF | 36.2% | 37% | 37.8% | |
| VTCO | Cut-off temperature rising threshold | As Percentage to VVREF | 33.7% | 34.4% | 35.1% | |
| Deglitch time for temperature out-of-range detection | VTS > VLTF, or VTS < VTCO, or VTS < VHTF | 400 | ms | |||
| Deglitch time for temperature in-valid-range detection | VTS < VLTF – VLTF_HYS or VTS >VTCO, or VTS > VHTF | 20 | ms | |||
| CHARGE OVERCURRENT COMPARATOR (CYCLE-BY-CYCLE) | ||||||
| VOC | Charge overcurrent falling threshold | Current rising, in nonsynchronous mode, mesure on V(SRP-SRN), VSRP < 2 V | 45.5 | mV | ||
| Current rising, as percentage of V(IREG_CHG), in synchronous mode, VSRP > 2.2 V | 160% | |||||
| Charge overcurrent threshold floor | Minimum OCP threshold in synchronous mode, measure on V(SRP-SRN), VSRP > 2.2 V | 50 | mV | |||
| Charge overcurrent threshold ceiling | Maximum OCP threshold in synchronous mode, measure on V(SRP-SRN), VSRP > 2.2 V | 180 | mV | |||
| CHARGE UNDERCURRENT COMPARATOR (CYCLE-BY-CYCLE) | ||||||
| VISYNSET | Charge undercurrent falling threshold | Switch from SYNCH to NON-SYNCH, VSRP > 2.2 V | 1 | 5 | 9 | mV |
| BATTERY SHORTED COMPARATOR (BATSHORT) | ||||||
| VBATSHT | BAT short falling threshold, forced nonsynchronous mode | VSRP falling | 2 | V | ||
| VBATSHT_HYS | BAT short rising hysteresis | 200 | mV | |||
| VBATSHT_DEG | Deglitch on both edge | 1 | μs | |||
| LOW CHARGE CURRENT COMPARATOR | ||||||
| VLC | Low charge current (average) falling threshold to force into nonsynchronous mode | Measure on V(SRP-SRN) | 1.25 | mV | ||
| VLC_HYS | Low charge current rising hysteresis | 1.25 | mV | |||
| VLC_DEG | Deglitch on both edge | 1 | μs | |||
| VREF REGULATOR | ||||||
| VVREF_REG | VREF regulator voltage | VVCC > VUVLO, (0- to 35-mA load) | 3.267 | 3.3 | 3.333 | V |
| IVREF_LIM | VREF current limit | VVREF = 0 V, VVCC > VUVLO | 35 | mA | ||
| REGN REGULATOR | ||||||
| VREGN_REG | REGN regulator voltage | VVCC > 10 V, CE = HIGH, (0- to 40-mA load) | 5.7 | 6 | 6.3 | V |
| IREGN_LIM | REGN current limit | VREGN = 0 V, VVCC > VUVLO, CE = HIGH | 40 | mA | ||
| TTC INPUT AND SAFETY TIMER | ||||||
| TPRECHG | Precharge safety timer range(1) | Precharge time before fault occurs | 1440 | 1800 | 2160 | s |
| TCHARGE | Fast charge safety timer range, with +/– 10% accuracy(1) | Tchg = CTTC × KTTC | 1 | 10 | h | |
| Fast charge timer accuracy(1) | 0.01 μF ≤ CTTC ≤ 0.11 μF | –10% | 10% | |||
| KTTC | Timer multiplier | 5.6 | min/nF | |||
| TTC low threshold | VTTC below this threshold disables the safety timer and termination | 0.4 | V | |||
| TTC oscillator high threshold | 1.5 | V | ||||
| TTC oscillator low threshold | 1 | V | ||||
| TTC source/sink current | 45 | 50 | 55 | μA | ||
| BATTERY SWITCH (BATFET) DRIVER | ||||||
| RDS_BAT_OFF | BATFET turnoff resistance | VACN > 5 V | 150 | Ω | ||
| RDS_BAT_ON | BATFET turnon resistance | VACN > 5 V | 20 | kΩ | ||
| VBATDRV_REG | BATFET drive voltage | VBATDRV_REG = VACN – VBATDRV when VACN > 5 V and BATFET is on | 4.2 | 7 | V | |
| AC SWITCH (ACFET) DRIVER | ||||||
| RDS_AC_OFF | ACFET turnoff resistance | VVCC > 5 V | 30 | Ω | ||
| RDS_AC_ON | ACFET turnon resistance | VVCC > 5 V | 20 | kΩ | ||
| VACDRV_REG | ACFET drive voltage | VACDRV_REG = VVCC – VACDRV when VVCC > 5 V and ACFET is on | 4.2 | 7 | V | |
| AC / BAT MOSFET DRIVERS TIMING | ||||||
| Driver dead time | Dead time when switching between AC and BAT | 10 | μs | |||
| BATTERY DETECTION | ||||||
| tWAKE | Wake time | Max time charge is enabled | 500 | ms | ||
| IWAKE | Wake current | RSENSE = 10 mΩ | 50 | 125 | 200 | mA |
| tDISCHARGE | Discharge time | Maximum time discharge current is applied | 1 | s | ||
| IDISCHARGE | Discharge current | 8 | mA | |||
| IFAULT | Fault current after a timeout fault | 2 | mA | |||
| VWAKE | Wake threshold (with-respect-to VREG) | Voltage on VFB to detect battery absent during wake | 50 | mV | ||
| VDISCH | Discharge threshold | Voltage on VFB to detect battery absent during discharge | 1.55 | V | ||
| PWM HIGH-SIDE DRIVER (HIDRV) | ||||||
| RDS_HI_ON | High-side driver (HSD) turnon resistance | VBTST – VPH = 5.5 V | 3.3 | 6 | Ω | |
| RDS_HI_OFF | High-side driver turnoff resistance | VBTST – VPH = 5.5 V | 1 | 1.3 | Ω | |
| VBTST_REFRESH | Bootstrap refresh comparator threshold voltage | VBTST – VPH when low side refresh pulse is requested | 4 | 4.2 | V | |
| PWM LOW-SIDE DRIVER (LODRV) | ||||||
| RDS_LO_ON | Low-side driver (LSD) turnon resistance | 4.1 | 7 | Ω | ||
| RDS_LO_OFF | Low-side driver turnoff resistance | 1 | 1.4 | Ω | ||
| PWM DRIVERS TIMING | ||||||
| Driver dead time | Dead time when switching between LSD and HSD, no load at LSD and HSD | 30 | ns | |||
| PWM OSCILLATOR | ||||||
| VRAMP_HEIGHT | PWM ramp height | As percentage of VCC | 7% | |||
| PWM switching frequency(1) | 510 | 600 | 690 | kHz | ||
| INTERNAL SOFT START (8 steps to regulation current ICHG) | ||||||
| Soft-start steps | 8 | step | ||||
| Soft-start step time | 1.6 | ms | ||||
| CHARGER SECTION POWER-UP SEQUENCING | ||||||
| Charge-enable delay after power up | Delay from CE = 1 to charger is allowed to turn on | 1.5 | s | |||
| LOGIC IO PIN CHARACTERISTICS (CE, STAT1, STAT2, PG) | ||||||
| VIN_LO | CE input low threshold voltage | 0.8 | V | |||
| VIN_HI | CE input high threshold voltage | 2.1 | ||||
| VBIAS_CE | CE input bias current | V = 3.3 V (CE has internal 1-MΩ pulldown resistor) | 6 | μA | ||
| VOUT_LO | STAT1, STAT2, PG output-low saturation voltage | Sink Current = 5 mA | 0.5 | V | ||
| IOUT_HI | Leakage current | V = 32 V | 1.2 | µA | ||